ACE4444B datasheet(2/6 Pages) ACE

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ACE4444B

N-Channel Enhancement Mode Field Effect Transistor

VER 1.2

Ordering information

ACE4444B XX + H

Electrical CharacteristicsTA=25 OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=250uA

Zero Gate Voltage Drain Current

IDSS

VDS=24V, VGS=0V

Gate Leakage Current

IGSS

VGS=±20V, VDS=0V

100

Static Drain-Source On-Resistance

RDS(ON)

VGS=10V, ID=20A

5.1

5.5

VGS=4.5V, ID=15A

7.4

8.5

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=250uA

1.8

Forward Transconductance

gFS

VDS=5V, ID=20A

100

Diode Forward Voltage

VSD

ISD=1A, VGS=0V

0.76

1.0

Maximum Body-Diode Continuous

Current

Switching

Total Gate Charge

VDS=15V, ID=20A

VGS=4.5V

28.5

Gate-Source Charge

Qgs

8.1

10.5

Gate-Drain Charge

Qgd

15.6

Turn-On Delay Time

Td(on)

VDS=15V, VGS=10V

RGEN=3Ω, RL=0.75Ω

Turn-On Rise Time

9.44

18.88

Turn-Off Delay Time

td(off)

58.84

117.68

Turn-Off Fall Time

8.68

17.36

Dynamic

Input Capacitance

Ciss

VDS=15V, VGS=0V

f=1MHz

3234.38

Output Capacitance

Coss

456.44

Reverse Transfer Capacitance

Crss

329.12

Note: A. The value of RθJA is measured with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment

with TA=25°C. The value in any given application depends on the user's specific board design.

B. Repetitive rating, pulse width limited by junction temperature.

The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.

FM : SOP-8

Pb - free

Halogen - free

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