ACE4710B datasheet(2/6 Pages) ACE

部件名	ACE4710B

功能描述	P-Channel Enhancement Mode MOSFET with Schottky Diode

PDF	6 Pages

Scroll/Zoom	100%

制造商	ACE [ACE Technology Co., LTD.]

网页	http://www.ace-ele.com

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2 / 6 page

ACE4710B

P-Channel Enhancement Mode MOSFET with Schottky Diode

VER 1.2

Packaging Type

DFN3*2

Ordering information

ACE4710B XX + H

Electrical Characteristics

TA=25

OC unless otherwise noted

Parameter

Symbol

Conditions

Min.

Typ.

Max.

Unit

P-channel Enhancement Mode MOSFET

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V, ID=-250uA

-20

Zero Gate Voltage Drain Current

IDSS

VDS=-20V, VGS=0V

-1

Gate Leakage Current

IGSS

VGS=±8V, VDS=0V

±100

Static Drain-Source On-Resistance

RDS(ON)

VGS=-4.5V, ID=-4A

VGS=-2.5V, ID=-3A

118

VGS=-1.8V, ID=-2A

236

Gate Threshold Voltage

VGS(th)

VDS=VGS, IDS=-250µA

-0.5

-0.7

-1.2

Turn-On Delay Time

Td(on)

VDD=-6V, RL=6Ω,

RG=6Ω, VGEN=-4.5V,

ID=-1A

Turn-On Rise Time

Turn-Off Delay Time

td(off)

300

Turn-Off Fall Time

120

Input Capacitance

Ciss

VDS=-6V, VGS=0V

f=1MHz

450

Output Capacitance

Coss

180

Reverse Transfer Capacitance

Crss

QN : DFN3*2

Pb - free

Halogen - free

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