BAS21SW datasheet(4/11 Pages) PHILIPS

4 / 11 page

BAS21W_SER_1

Product data sheet

Rev. 01 — 9 October 2009

4 of 11

NXP Semiconductors

BAS21W series

High-voltage switching diodes

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

Characteristics

[1]

When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA.

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per device

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

625

K/W

Rth(j-sp)

thermal resistance from

junction to solder point

300

K/W

Table 8.

Characteristics

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

forward voltage

IF = 100 mA

1.0

IF = 200 mA

1.25

reverse current

VR = 200 V

100

VR = 200 V; Tj = 150 °C

100

µA

diode capacitance

f = 1 MHz; VR =0V

trr

reverse recovery time

[1] --50

BAS21SW 数据表(PDF) 4 Page - NXP Semiconductors

BAS21SW 数据表(HTML) 4 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11

数据表下载