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AP4800AGM-HF 数据表(PDF) 1 Page - Advanced Power Electronics Corp. |
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AP4800AGM-HF 数据表(HTML) 1 Page - Advanced Power Electronics Corp. |
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1 / 4 page ![]() Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET ▼ Simple Drive Requirement BVDSS 30V ▼ Low On-resistance RDS(ON) 18mΩ ▼ Fast Switching Characteristic ID 9.6A ▼ RoHS Compliant Description Absolute Maximum Ratings Symbol Units VDS V VGS V ID@TA=25℃ A ID@TA=70℃ A IDM A PD@TA=25℃ W W/℃ TSTG ℃ TJ ℃ Symbol Value Unit Rthj-a Maximum Thermal Resistance, Junction-ambient 3 50 ℃ /W Data and specifications subject to change without notice 200902049 1 AP4800AGM-HF Rating Halogen-Free Product 30 +25 9.6 Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 3 -55 to 150 Continuous Drain Current 3 7.7 Pulsed Drain Current 1 40 0.02 Storage Temperature Range 2.5 -55 to 150 Thermal Data Parameter Total Power Dissipation Operating Junction Temperature Range Linear Derating Factor Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. S S S G D D D D SO-8 G D S |
类似零件编号 - AP4800AGM-HF |
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类似说明 - AP4800AGM-HF |
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