LESHAN RADIO COMPANY, LTD.

High-Frequency Amplifier

Transistor

Features

1.High gain bandwidth product.(Typ.f

T

=8.0GHz)

2.High gain,low noise

3.Can operate at low voltage

L2SC5635WT1G

Parameter

Symbol

Value

Unit

Collector-Base Voltage

15

V

Collector-Emitter Voltage

6

V

Emitter-base voltage

Collector Current

50

mA

Collector power dissipation

150

mW

Junction temperature

125

°C

Storage temperature

-55~+125

°C

Parameter

Symbol

Min.

Typ

Max.

Unit

Conditions

Collector cutoff current

I

CBO

--

1.0

µAV

Emitter cutoff current

I

EBO

--

1.0

µAV

Insertion power gain

21

-

DC current transfer ratio

h

FE

50

-

250

-

V

CE

I

C

=5V,

Transition frequency

f

T

5.0

8.0

-

GHz

V

I

Output capacitance

Cob

-

1.0

pF

V

I

Noise factor

NF

-

1.4

-

dB

V

I

DEVICE MARKING

L2SC5635WT1G=HF1

1

BASE

2

EMITTER

COLLECTOR

3

4.

ORDERING INFORMATION

Device

Package

Shipping

L2SC5635WT1G

3000/Tape & Reel

SC-70

L2SC5635WT3G

SC-70

10000/Tape & Reel

We declare that the material of product compliance with RoHS requirements.

1.5

V

S

2

-

dB

9.0

12.0

I

V

I

I

=10mA

1

3

2

SC-70

Rev.O 1/3