L9012PLT3G datasheet(1/2 Pages) LRC

部件名	L9012PLT3G

功能描述	General Purpose Transistors PNP Silicon

PDF	2 Pages

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制造商	LRC [Leshan Radio Company]

网页	http://www.lrc.cn/

标志

1 / 2 page

General Purpose Transistors

PNP Silicon

MAXIMUM RATINGS

Symbol

Value

Unit

Collector-Emitter Voltage

VCEO

-20

V

Collector-Base Voltage

VCBO

-40

V

Emitter-Base Voltage

VEBO

Collector current-continuoun

IC

-500

mAdc

THERMAL CHARATEERISTICS

Symbol

Max

Unit

Total Device Dissipation FR-5 Board, (1)

PD

225

mW

1.8

mW/

oC

Thermal Resistance, Junction to Ambient

R JA

556

oC/W

PD

300

mW

2.4

mW/

oC

Thermal Resistance, Junction to Ambient

R θJA

417

oC/W

Junction and Storage Temperature

Tj ,Tstg

-55 to +150

oC

ELECTRICAL CHARACTERISTICS (TA=25

oC unless otherwise noted)

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage

V(BR)CEO

-20

-

V

(IC=-1.0mA)

Emitter-Base Breakdown Voltage

V(BR)EBO

(IE=-100

Collector-Base Breakdown Voltage

V(BR)CBO

-40

-

V

(IC=-100

A)

Collector Cutoff Current (VCB=-35V)

I CBO

Emitter Cutoff Current (VBE=-4V)

IEBO

-150

nA

Characteristic

Total Device Dissipation

Derate above 25

oC

Rating

TA=25

oC

Derate above 25

oC

Alumina Substrate, (2) TA=25

oC

Characteristic

1

SOT-23 (TO-236AB)

2

EMITTER

3

COLLECTOR

1

BASE

LESHAN RADIO COMPANY, LTD.

θ

A)

µ

FEATURE

L9012PLT1G

We declare that the material of product compliance with RoHS requirements.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Shipping

L9012PLT1G

12P

3000/Tape&Reel

L9012PLT3G

12P

10000/Tape&Reel

L9012QLT1G

12Q

3000/Tape&Reel

L9012QLT3G

12Q

10000/Tape&Reel

L9012RLT1G

12R

3000/Tape&Reel

L9012RLT3G

12R

10000/Tape&Reel

L9012SLT1G

12S

3000/Tape&Reel

L9012SLT3G

12S

10000/Tape&Reel

Series

-5

V

-5

-

V

-

-150

nA

1. FR–5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

2

3

Rev.O 1/2

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