LBAT54HT3G datasheet(1/3 Pages) LRC

部件名	LBAT54HT3G

功能描述	Schottky Barrier Diodes Device Marking: JV

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制造商	LRC [Leshan Radio Company]

网页	http://www.lrc.cn/

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1 / 3 page

Schottky Barrier Diodes

2

ANODE

1

CATHODE

MAXIMUM RATINGS (TJ =125°C unless otherwise noted )

Rating

Symbol

Value

Unit

Reverse Voltage

V R

30

V

Characteristic

Symbol

Max

Unit

Total Device Dissipation FR-5 Board,*

PD

200

mW

TA = 25°C

Derate above 25°C

1.57

mW/°C

Thermal Resistance Junction to Ambient

R

θJA

635

°C/W

* FR-4 Minimum Pad

1

2

LBAT54HT1G

These Schottky barrier diodes are designed for high speed switching

applications, circuit protection, and voltage clamping. Extremely low forward volt-

age reduces conduction loss. Miniature surface mount package is excellent for

hand held and portable applications where space is limited.

• Extremely Fast Switching Speed

• Low Forward Voltage — 0.35 Volts (Typ) @ I F = 10 mAdc

• Device Marking: JV

ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) (EACH DIODE)

Characteristic

Symbol

Min

Typ

Max

Unit

Reverse Breakdown Voltage (I R = 10

µA)

V(BR)R

30

—

Volts

Total Capacitance (V R = 1.0 V, f = 1.0 MHz)

CT

——

10

pF

Reverse Leakage (V R = 25 V)

IR

—0.5

2.0

µAdc

Forward Voltage (I F = 0.1 mAdc)

V F

—

0.22

0.24

Vdc

Forward Voltage (I F = 0.15 mAdc)

V F

—

0.24

0.26

Vdc

Forward Voltage (I F = 0.15 mAdc, Tj =-25°C)

V F

—

0.33

0.35

Vdc

Forward Voltage (I F = 0.15 mAdc, Tj =85°C)

V F

—

0.16

0.18

Vdc

Forward Voltage (I F = 30 mAdc)

V F

—

0.41

0.5

Vdc

Forward Voltage (I F = 100 mAdc)

V F

—

0.52

1.0

Vdc

Reverse Recovery Time

(I F = I R = 10 mAdc, I R(REC) = 1.0 mAdc, Figure 1)

trr

——

5.0

ns

Forward Voltage (I F = 1.0 mAdc)

V F

—

0.29

0.32

Vdc

Forward Voltage (I F = 10 mAdc)

V F

—

0.35

0.40

Vdc

Forward Current (DC)

IF

—

200

mAdc

Repetitive Peak Forward Current

IFRM

—

300

mAdc

Non–Repetitive Peak Forward Current (t < 1.0 s)

IFSM

—

600

mAdc

SOD-323

Device

Marking

Shipping

LBAT54HT31G

JV

3000/Tape & Reel

3

JV

10000/Tape & Reel

ORDERING INFORMATION

LESHAN RADIO COMPANY, LTD.

LBAT54HT 3 G

We declare that the material of product

compliance with RoHS requirements.

Junction Temperature

T J

125Max

°C

Storage Temperature Range

T stg

–55 to +150

°C

Rev.A 1/3

类似零件编号 - LBAT54HT3G

制造商	部件名	数据表	功能描述
Leshan Radio Company	LBAT54HT1	88Kb / 3P	Schottky Barrier Diodes
	LBAT54HT1G	88Kb / 3P	Schottky Barrier Diodes
	LBAT54HT1G	261Kb / 3P	Schottky Barrier Diodes

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