STPS40M120CT datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

STPS40M120C

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Doc ID 022916 Rev 1

Characteristics

When the two diodes 1 and 2 are used simultaneously:

ΔT

j(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

Table 2.

Absolute ratings (limiting values per diode at Tamb = 25 °C, unless

otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

120

IF(RMS) Forward rms current

IF(AV)

Average forward current,

δ = 0.5

Per diode

Tc = 130 °C

Per device

Tc = 120 °C

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

220

PARM

(1)

For pulse time duration deratings, please refer to Figure 4. More details regarding the avalanche energy

measurements and diode validation in the avalanche are provided in the STMicroelectronics Application

notes AN1768, “Admissible avalanche power of schottky diodes” and AN2025, “Converter improvement

using Schottky rectifier avalanche specification”.

Repetitive peak avalanche power

Tj = 125 °C, tp = 10 µs

1600

VARM

(2)

See Figure 9

Maximum repetitive peak

avalanche voltage

tp < 10 µs, Tj < 125 °C, IAR < 10.7 A

150

VASM

(2)

Maximum single-pulse

peak avalanche voltage

tp < 10 µs, Tj < 125 °C, IAR < 10.7 A

150

Tstg

Storage temperature range

-65 to +175

°C

Maximum operating junction temperature(3)

condition to avoid thermal runaway for a diode on its own heatsink

150

°C

Table 3.

Thermal resistance

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

Per diode

1.10

°C/W

Total

0.80

Rth(c)

Coupling

0.50

dPtot

dTj

Rth(j-a)

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