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SMP100MC 数据表(PDF) 5 Page - STMicroelectronics |
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SMP100MC 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 13 page ![]() SMP100MC Characteristics Doc ID 9699 Rev 5 5/13 Figure 2. Pulse waveform Figure 3. Non repetitive surge peak on-state current versus overload duration 100 50 %IPP tr tp 0 t Repetitive peak pulse current tr = rise time (µs) tp = pulse duration time (µs) 0 10 20 30 40 50 60 70 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 I (A) TSM t(s) F=50Hz Tj initial = 25°C Figure 4. On-state voltage versus on-state current (typical values) Figure 5. Relative variation of holding current versus junction temperature 10 100 01 2345 678 V (V) T I (A) T Tj=25°C 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Tj(°C) I [Tj] / I [Tj=25°C] HH Figure 6. Relative variation of breakover voltage versus junction temperature Figure 7. Relative variation of leakage current versus reverse voltage applied (typical values) 0.94 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 1.04 1.05 1.06 1.07 1.08 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Tj(°C) V [Tj] / V [Tj=25°C] BO BO 1.E+00 1.E+01 1.E+02 1.E+03 25 50 75 100 125 I [Tj] / I [Tj=25°C] RR Tj(°C) V =243V R |
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