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AM4530CE 数据表(PDF) 1 Page - Analog Power

部件名 AM4530CE
功能描述  P & N-Channel 32-V (D-S) MOSFET
PDF  3 Pages
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制造商  ANALOGPOWER [Analog Power]
网页  http://www.analogpowerinc.com/index.html
标志 ANALOGPOWER - Analog Power

AM4530CE 数据表(HTML) 1 Page - Analog Power

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AM4530CE
Analog Power
PRELIMINARY
Publication Order Number:
DS-AM4530CE_A
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r
DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
VDS (V)
rDS(on) m(Ω)ID (A)
82 @ VGS = 4.5V
4.2
50 @ VGS = 10V
5.3
80 @ VGS = -4.5V
-4.2
52 @ VGS = -10V
-5.2
30
PRODUCT SUMMARY
-30
P & N-Channel 32-V (D-S) MOSFET
•Low r
DS(on) provides higher efficiency and
extends battery life
Low thermal impedance copper leadframe
SOIC-8 saves board space
Fast switching speed
High performance trench technology
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
b.
Pulse width limited by maximum junction temperature
Symbol N-Channel P-Channel Units
VDS
30
-30
VGS
±20
±20
TA=25
oC
5.3
-5.2
TA=70
oC4.2
-4.1
IDM
20
-20
IS
1.3
-1.3
A
TA=25
oC
2.1
2.1
TA=70
oC1.3
1.3
TJ, Tstg
oC
Continuous Source Current (Diode Conduction)
a
ABSOLUTE MAXIMUM RATINGS (TA = 25
oC UNLESS OTHERWISE NOTED)
Parameter
Pulsed Drain Current
b
V
Gate-Source Voltage
Drain-Source Voltage
Continuous Drain Current
a
ID
A
Power Dissipation
a
PD
Operating Junction and Storage Temperature Range
W
-55 to 150
Symbol
Maximum Units
t <= 10 sec
62.5
oC/W
Steady-State
110
oC/W
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
a
RθJA
ESD Protected
2000V
D
2
P-Channel MOSFET
D
1
G
1
N-Channel MOSFET
S
1
G
1
S
2
G
2
1
2
3
4
SOIC-8
Top View
D
1
D
1
D
2
D
2
8
7
6
5
S
1
G
2
S
2


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