2ST501T datasheet(2/6 Pages) STMICROELECTRONICS

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2ST501T

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Table 3: Thermal Data

Table 4: Electrical Characteristics (Tcase = 25 oC unless otherwise specified)

* Pulsed: Pulsed duration = 300 ms, duty cycle

≤ 1.5 %.

Rthj-case

Thermal Resistance Junction-Case

Max

1.25

oC/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ICES

Collector Cut-off Current

(IE = 0)

VCE = 500 V

Tcase = 125 oC

100

500

ICEO

Collector Cut-off Current

(IB = 0)

VCE = 350 V

Tcase = 125 oC

100

500

IEBO

Emitter Cut-off Current

(IC = 0)

VEB = 5 V

VCEO(sus)* Collector-Emitter

Sustaining Voltage

(IB = 0 )

IC = 10 mA

L = 10 mH

350

VCE(sat)* Collector-Emitter

Saturation Voltage

IC = 2 A

IB = 2 mA

1.5

VBE(sat)* Base-Emitter Saturation

Voltage

IC = 2 A

IB = 2 mA

hFE

DC Current Gain

IC = 2 A

VCE = 2 V

2000

INDUCTIVE LOAD

Storage Time

Fall Time

VCC = 12 V

Vclamp = 250 V

L = 4 mH

IC = 2 A

IB = 20 mA

VBE = -3 V

1.5

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