STP75N3LLH6 datasheet(4/21 Pages) STMICROELECTRONICS

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Electrical characteristics

STD/P/U75N3LLH6, STU75N3LLH6-S

4/21

Doc ID 15978 Rev 4

Electrical characteristics

(TCASE=25°C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage (VGS = 0)

ID = 250 µA

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 30 V

VDS =30 V TC = 125 °C

µA

IGSS

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

1.7

2.5

RDS(on)

Static drain-source on

resistance

VGS = 10 V, ID = 37.5 A

SMD version

0.0042 0.0055

VGS = 10 V, ID = 37.5 A

0.0046 0.0059

VGS = 4.5 V, ID = 37.5 A

SMD version

0.0065

0.008

VGS = 4.5 V, ID = 37.5 A

0.0069 0.0084

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

1350

230

140

1690

290

176

2030

350

210

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 15 V, ID = 75 A,

VGS = 4.5 V

(see Figure 14)

23.8

11.2

8.4

Qgs1

Qgs2

Pre Vth gate-to-source

charge

Post Vth gate-to-source

charge

VDD=15 V, ID = 75 A

VGS =5 V

(Figure 19)

3.9

4.1

5.5

5.7

Gate input resistance

f=1 MHz gate bias

Bias=0 test signal

level=20 mV open drain

1.25

1.7

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