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PAM8010NHR 数据表(PDF) 4 Page - Power Analog Micoelectronics |
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PAM8010NHR 数据表(HTML) 4 Page - Power Analog Micoelectronics |
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4 / 17 page ![]() 4 Electrical Characteristic V =5V, Gain = Maximum, R =8 T =25°C unless otherwise noted. DD L A Ω, , , Power Analog Microelectronics Inc www.poweranalog.com PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNITS Class D Stage Suppl y Voltage Range VDD 2.5 5.5 V Quiescent Current I Q No Load 10 15 mA Output Offset Voltage V OS No Load 30 mV P MOSFET 0.21 Drain-Source On- State Resistance R DS (ON) I D S=0.5A N M OSFET 0.17 Ω RL= 8Ω 1.55 1.7 Output Power P O THD+N=10%, f=1kHz RL= 4Ω 2.85 3.0 W RL = 8Ω,PO=0.85W,f=1KHz 0.08 Total Harmonic Distortion Plus Noise THD+N RL = 4Ω,PO=1.75W,f=1KHz 0.08 % Power Supply R ipple Rejection PSRR Input AC -GND, f=1KHz, Vpp=200mV 70 dB Channel Separation CS PO=1W, f=1KH z -95 dB Os cillator Fr equency fOSC 200 250 300 kHz PO=1.7W,f=1kHz, RL=8Ω 85 90 % Efficiency η PO=3.0W,f=1kHz, RL=4Ω 80 83 % A-weighting 60 Nois e Vn Input AC-GND No A-weighting 80 uV Signal Noise Ratio SNR f=20- 20kHz, THD=1% 95 dB Earphone Stage Output Offset Voltage VOS No Load 2.45 2.5 2.55 V Output Power P O THD+N=1%, RL=32 Ω, f=1KHz 60 mW Total Harmonic Distortion Plus Noise THD+N RL = 32Ω,PO=10mW,f=1KH z 0.02 % Power Supply R ipple Rejection PSRR Input AC -GND, f=1KHz, Vpp=200mV 80 dB Channel Separation CS VO=1V, f=1KHz -95 dB A-weighting 20 Nois e Vn Input AC- GND No A-w eighting 35 uV Signal Noise Ratio SNR f=20- 20kHz, THD=1% 95 dB Control Section Mute Current IM UTE MUTE_D=VDD, MUTE_AB=GND 7 10 mA Mute Class D Ear phone Cur rent IM UTE_D MUTE_D=VDD, MUTE_AB=VDD 7 10 mA Mute Class AB Ear phone Current I M UTE_A B MUTE_D=GND,MUTE_AB=VDD 9 10 mA Shutdown Cur rent ISHDN VSHDN=0V 1 µA Logic Input High V IH 1.4 Logic Input Low VIL 0.6 V Over Temperatur e Protect ion OTP 150 °C Over Temperatur e Hysteresis OTH 40 °C 05/2011 Rev1.0 PAM8010 3W Stereo Class-D with DC Volume, Headphone and Power Limit |
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