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MCP98244 数据表(PDF) 3 Page - Microchip Technology

部件名 MCP98244
功能描述  DDR4 DIMM Temperature Sensor with EEPROM for SPD
PDF  52 Pages
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制造商  MICROCHIP [Microchip Technology]
网页  http://www.microchip.com
标志 MICROCHIP - Microchip Technology

MCP98244 数据表(HTML) 3 Page - Microchip Technology

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 2012-2013 Microchip Technology Inc.
DS22327C-page 3
MCP98244
1.0
ELECTRICAL
CHARACTERISTICS
Absolute Maximum Ratings †
VDD.................................................................................. 4.0V
Voltage at all Input/Output pins ............... GND – 0.3V to 4.0V
Pin A0 .......................................................GND – 0.3V to 11V
Storage temperature .....................................-65°C to +150°C
Ambient temp. with power applied ................-40°C to +125°C
Junction Temperature (TJ) ..........................................+150°C
ESD protection on all pins (HBM:MM) ................. (4 kV:200V)
Latch-Up Current at each pin (25°C) ....................... ±200 mA
†Notice:
Stresses above those listed under “Maximum
ratings” may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied.
Exposure to maximum rating conditions for extended periods
may affect device reliability.
TEMPERATURE SENSOR DC CHARACTERISTICS
Electrical Specifications:
Unless otherwise indicated, VDD = 1.7V to 3.6V, GND = Ground,
and TA = -40°C to +125°C.
Parameters
Sym
Min
Typ
Max
Unit
Conditions
Temperature Sensor Accuracy
+75°C < TA  +95°C
TACY
-1.0
±0.2
+1.0
°C
JC42.4 - TSE2004B1
Grade B Accuracy Specification
VDD = 1.7V to 3.6V
+40°C < TA  +125°C
-2.0
±0.5
+2.0
°C
-40°C < TA  +125°C
-3.0
±1
+3.0
°C
Temperature Conversion Time
0.5°C/bit
tCONV
—30
—
ms
0.25°C/bit
—
65
125
ms 15 s/sec (typical) (See Section 5.2.4)
0.125°C/bit
—
130
—
ms
0.0625°C/bit
—
260
—
ms
Power Supply
Specified Voltage Range
VDD
1.7
—
3.6
V
Operating Current
IDD_TS
—
100
500
µA
EEPROM Inactive
Shutdown Current
ISHDN
—
0.2
1
µA
EEPROM Inactive, I2C Bus Inactive,
TA = 85°C
Power On Reset (POR)
VPOR
—
1.4
1.6
V
Threshold for rising and falling VDD
Settling Time after POR
tPOR
—
—
1
ms For warm and cold power cycles
Line Regulation
°C
—
0.2
—
°C
VDD = 1.7V to 3.6V
Event Output (Open-Drain output, external pull-up resistor required), see Section 5.2.3
High-Level Current (leakage)
IOH
——
1
µA
VOH = VDD
Low-Level Voltage
VOL
——
0.4
V
IOL= 3 mA (Active-Low, Pull-up
Resistor)
Thermal Response, from +25°C (Air) to +125°C (oil bath)
TDFN-8
tRES
—
0.7
—
s
Time to 63% (89°C)



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