©2013 Silicon Storage Technology, Inc.

DS75056A

04/13

2

2.4 GHz High-Power and High-Gain Power Amplifier

SST12LP15A

Data Sheet

Product Description

The SST12LP15A is a high-power and high-gain power amplifier based on the highly-reliable InGaP/

GaAs HBT technology.

The SST12LP15A can be easily configured for high-power applications with superb power-added effi-

ciency while operating over the 2.4-2.5 GHz frequency band. It typically provides 32 dB gain with 26%

dBm for 802.11b.

The SST12LP15A has excellent linearity, typically ~4% added EVM at 23 dBm output power which is

essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 25 dBm.

SST12LP15A also has wide-range (>25 dB), temperature-stable (~1 dB over 85°C), single-ended/dif-

ferential power detectors which lower users’ cost on power control.

The power amplifier IC also features easy board-level usage along with high-speed power-up/down

off switching signal directly from the baseband chip. These features coupled with low operating current

make the SST12LP15A ideal for the final stage power amplification in battery-powered 802.11b/g/n

WLAN transmitter applications.

The SST12LP15A is offered in 16-contact VQFN package. See Figure 2 for pin assignments and Table

1 for pin descriptions.