25AA080/25LC080/25C080

DS21230E-page 2

 1997-2012 Microchip Technology Inc.

1.0

ELECTRICAL CHARACTERISTICS

Storage temperature .................................................................................................................................-65°C to 150°C

Ambient temperature under bias ...............................................................................................................-40°C to 125°C

Soldering temperature of leads (10 seconds) ....................................................................................................... +300°C

ESD protection on all pins ......................................................................................................................................... 4 KV

1.1

DC Characteristics

† NOTICE: Stresses above those listed under ‘Maximum ratings’ may cause permanent damage to the device. This

is a stress rating only and functional operation of the device at those or any other conditions above those indicated in

the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended

period of time may affect device reliability.

DC CHARACTERISTICS

Industrial (I):

Param.

No.

Sym.

Characteristic

Min.

Max.

Units

Test Conditions

D001

High-level input

voltage

2.0

V

2.7V (Note)

D002

V

D003

Low-level input

voltage

-0.3

0.8

V

2.7V (Note)

D004

D005

Low-level output

voltage

—0.4

V

D006

—0.2

V

D007

High-level output

voltage

—

V

A

D008

Input leakage current

-10

10

D009

Output leakage

current

-10

10

D010

Internal Capacitance

(all inputs and

outputs)

—7

pF

D011

Operating Current

—

—

1

500

mA

A

SO = Open

SO = Open

D012

—

—

5

3

mA

mA

D013

Standby Current

—

—

5

1

A

A

Note:

This parameter is periodically sampled and not 100% tested.