 2001-2012 Microchip Technology Inc.

DS21490D-page 3

TCN75

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings*

ESD Susceptibility (Note 3) ............................... 1000V

Voltage on Pins:

Voltage on Pins:

SDA, SCL, INT/CMPTR .. (GND – 0.3V) to 5.5V

Thermal Resistance (Junction to Ambient)

8-Pin SOIC.......................................... 170°C/W

8-Pin MSOP ....................................... 250°C//W

*Stresses

above

those

listed

under

“Absolute

Maximum Ratings” may cause permanent damage to

the device. These are stress ratings only and functional

operation of the device at these or any other conditions

above those indicated in the operation sections of the

specifications is not implied. Exposure to Absolute

Maximum Rating conditions for extended periods may

affect device reliability.

TCN75 ELECTRICAL SPECIFICATIONS

Symbol

Parameter

Min

Typ

Max

Units

Test Conditions

Power Supply

Power Supply Voltage

2.7

—

5.5

—

Operating Current

—

—

0.250

—

—

1.0

mA

Serial Port Active

Standby Supply Current

—

1

—

A

Shutdown Mode, Serial Port

INT/CMPTR Output

Sink Current: INT/CMPTR,

SDA Outputs

—1

4

mA

Note 1

INT/CMPTR Response Time

1

—

6

Output Low Voltage

—

—

0.8

V

Temp-to-Bits Converter

T

Temperature Accuracy (Note 2)

—±3

—

C

-55°C

 T

TCN75-3.3 MUA

TCN75-5.0 MUA

—±0.5

±3

C25°C  T

Conversion Time

—

55

—

msec

TEMP Default Value

—

80

—

C

Power-up

—

75

—

C

Power-up

2-Wire Serial Bus Interface

Logic Input High

—

—

V

Logic Input Low

—

—

V

Logic Output Low

—

—

0.4

V

Input Capacitance SDA, SCL

—

15

—

pF

I/O Leakage

—

±100

—

pA

SDA Output Low Current

——

6mA