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ADG779BKS-R2 数据表(PDF) 4 Page - Analog Devices

部件名 ADG779BKS-R2
功能描述  CMOS 1.8 V to 5.5 V, 2.5 廓 SPDT Switch/2:1 Mux in Tiny SC70 Package
PDF  12 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

ADG779BKS-R2 数据表(HTML) 4 Page - Analog Devices

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ADG779
Rev. A | Page 4 of 12
VDD = 3 V ± 10%, GND = 0 V1
Table 2.
B Version
Parameter
25°C
−40°C to
+85°C
Unit
Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
0 V to VDD
V
On Resistance (RON)
6
7
Ω typ
VS = 0 V to VDD, IS = –10 mA, see Figure 12
10
Ω max
On-Resistance Match Between Channels (ΔRON)
0.1
Ω typ
VS = 0 V to VDD, IS = –10 mA
0.8
Ω max
On-Resistance Flatness (RFLAT (ON))
2.5
Ω typ
VS = 0 V to VDD, IS = –10 mA
LEAKAGE CURRENTS2
VDD = 3.3 V
Source Off Leakage IS (Off )
±0.01
±0.05
nA typ
VS = 3 V/1 V, VD = 1 V/3 V, see Figure 13
Channel On Leakage ID, IS (On)
±0.01
±0.05
nA typ
VS = VD = 1 V, or VS = VD = 3 V, see Figure 14
DIGITAL INPUTS
Input High Voltage, VINH
2.0
V min
Input Low Voltage, VINL
0.8
V max
Input Current
IINL or IINH
0.005
μA typ
VIN = VINL or VINH
±0.1
μA max
DYNAMIC CHARACTERISTICS2
tON
16
ns typ
RL = 300 Ω, CL = 35 pF
24
ns max
VS = 2 V, see Figure 15
tOFF
4
ns typ
RL = 300 Ω, CL = 35 pF
7
ns max
VS = 2 V, see Figure 15
Break-Before-Make Time Delay, tD
8
ns typ
RL = 300 Ω, CL = 35 pF
1
ns min
VS1 = VS2 = 2 V, see Figure 16
Off Isolation
–67
dB typ
RL = 50 Ω, CL = 5 pF, f = 10 MHz
–87
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 17
Channel-to-Channel Crosstalk
–62
dB typ
RL = 50 Ω, CL = 5 pF, f = 10 MHz
–82
dB typ
RL = 50 Ω, CL = 5 pF, f = 1 MHz, see Figure 18
Bandwidth −3 dB
200
MHz typ
RL = 50 Ω, CL = 5 pF, see Figure 19
CS (Off )
7
pF typ
f = 1 MHz
CD, CS (On)
27
pF typ
f = 1 MHz
POWER REQUIREMENTS
VDD = 3.3 V
Digital Inputs = 0 V or 3 V
IDD
0.001
μA typ
1.0
μA max
1 Temperature range is B Version, −40°C to +85°C.
2 Guaranteed by design, not subject to production test.



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