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SA555DT 数据表(PDF) 5 Page - STMicroelectronics |
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SA555DT 数据表(HTML) 5 Page - STMicroelectronics |
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5 / 20 page ![]() NE555 - SA555 - SE555 Electrical characteristics Doc ID 2182 Rev 6 5/20 VOH High level output voltage VCC = +15 VIO(sink) = 200 mA IO(sink) = 100 mA VCC = +5 V IO(sink) = 100 mA 13 3 12.5 13.3 3.3 12.7 5 2.75 12.5 13.3 3.3 V Idis(off) Discharge pin leakage current (output high) Vdis = 10 V 20 100 20 100 nA Vdis(sat) Discharge pin saturation voltage (output low) (4) VCC = +15V, Idis = 15 mA VCC = +5V, Idis = 4.5 mA 180 80 480 200 180 80 480 200 mV tr tf Output rise time Output fall time 100 100 200 200 100 100 300 300 ns toff Turn off time (5) (Vreset = VCC)0.5 0.5 µs 1. Tested at VCC = +5 V and VCC = +15 V. 2. This will determine the maximum value of RA + RB for 15 V operation. The maximum total (RA + RB) is 20 MΩ for +15 V operation and 3.5 M Ω for +5 V operation. 3. Specified with trigger input high. 4. No protection against excessive pin 7 current is necessary, providing the package dissipation rating is not exceeded. 5. Time measured from a positive pulse (from 0 V to 0.8 x VCC) on the threshold pin to the transition from high to low on the output pin. Trigger is tied to threshold. Table 3. Tamb = +25° C, VCC = +5 V to +15 V (unless otherwise specified) (continued) Symbol Parameter SE555 NE555 - SA555 Unit Min. Typ. Max. Min. Typ. Max. |
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