This is information on a product in full production.

March 2013

DocID023758 Rev 4

1/12

12

STN3P6F6

P-channel 60 V, 0.13

Ω typ., 3 A STripFET™ VI DeepGATE™

Power MOSFET in a SOT-223 package

Datasheet

Figure 1. Internal schematic diagram

Features

• High avalanche ruggedness

• Low gate drive power losses

Applications

• Switching applications

Description

This device is a P-channel Power MOSFET

DeepGATE™ technology, with a new gate

structure. The resulting Power MOSFET exhibits

Note:

For the P-channel Power MOSFET the actual polarity of the voltages and the current must

be reversed.

SOT-223

1

2

4

3

D (2, 4)

G (1)

S (3)

Order code

STN3P6F6

60 V

0.16

Ω @ 10 V

3 A

Table 1. Device summary

Order code

Marking

Package

Packaging

STN3P6F6

STN3P6F6

SOT-223

Tape and reel

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