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TYN412RG 数据表(PDF) 3 Page - STMicroelectronics

部件名 TYN412RG
功能描述  Sensitive and standard 12 A SCRs
PDF  13 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

TYN412RG 数据表(HTML) 3 Page - STMicroelectronics

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TN1215, TS1220, TYN612, TYN812, TYN1012
Characteristics
Doc ID 7475 Rev 7
3/13
Table 4.
Standard electrical characteristics (Tj = 25 °C, unless otherwise specified)
Symbol
Test conditions
TN1215
TYN
Unit
B / H
G
x12T
x12
IGT
VD = 12 V
RL = 33 Ω
MIN.
2
0.5
2
mA
MAX.
15
5
15
VGT
MAX.
1.3
V
VGD
VD = VDRM RL = 3.3 kΩ
Tj = 125 °C
MIN.
0.2
V
IH
IT = 500 mA Gate open
MAX.
40
30
15
30
mA
IL
IG = 1.2 IGT
MAX.
80
60
30
60
mA
dV/dt
VD = 67 % VDRM Gate open
Tj =125 °C
MIN.
200
40
200
V/µs
VTM
ITM = 24 A tp = 380 µs
Tj = 25 °C
MAX.
1.6
V
Vt0
Threshold voltage
Tj = 125 °C
MAX.
0.85
V
Rd
Dynamic resistance
Tj = 125 °C
MAX.
30
m
Ω
IDRM
IRRM
VDRM = VRRM
Tj = 25 °C
MAX.
5µA
Tj = 125 °C
2
mA
Table 5.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case (DC)
1.3
°C/W
Rth(j-a)
Junction to ambient (DC)
S(1) = 0.5 cm²
DPAK
70
°C/W
S(1) = 1 cm²
D2PAK
45
IPAK
100
TO-220AB
60
1.
S = Copper surface under tab
Figure 1.
Maximum average power
dissipation versus average
on-state current
Figure 2.
Average and DC on-state current
versus case temperature
01
23
456
7
8
9
0
1
2
3
4
5
6
7
8
9
10
11
12
P(W)
I
(A)
T(AV)
α = 180°
360°
α
0
25
50
75
100
125
0
2
4
6
8
10
12
14
I
(A)
T(AV)
T
(°C)
case
α = 180°
D.C.



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