IRGS4045DPDF datasheet(2/12 Pages) IRF

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IRGS4045DPbF

October 10, 2012

Notes:

VCC = 80% (VCES), VGE = 15V, L = 1.0mH, RG = 47

Pulse width limited by max. junction temperature.

R is measured at TJ approximately 90°C.

Refer to AN-1086 for guidelines for measuring V(BR)CES safely.

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.

Maximum limits are based on statistical sample size characterization.

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max.

Units

Conditions

V(BR)CES

Collector-to-Emitter Breakdown Voltage

600

—

VGE = 0V, Ic =100 μA f

V(BR)CES/TJ

Temperature Coeff. of Breakdown Voltage

—

0.36

—

V/°C VGE = 0V, Ic = 250μA ( 25 -175

oC ) f

—1.7

2.0

IC = 6.0A, VGE = 15V, TJ = 25°C

VCE(on)

Collector-to-Emitter Saturation Voltage

—

2.07

—

IC = 6.0A, VGE = 15V, TJ = 150°C

—2.14

—

IC = 6.0A, VGE = 15V, TJ = 175°C

VGE(th)

Gate Threshold Voltage

4.0

—

6.5

VCE = VGE, IC = 150μA

VGE(th)/TJ

Threshold Voltage temp. coefficient

—

-13

—

mV/°C VCE = VGE, IC = 250μA ( 25 -175

oC )

gfe

Forward Transconductance

—

5.8

—

VCE = 25V, IC = 6.0A, PW =80s

ICES

——

μA

VGE = 0V,VCE = 600V

——

250

VGE = 0V, VCE = 600V, TJ =175°C

VFM

—1.60

2.30

IF = 6.0A

—1.30

—

IF = 6.0A, TJ = 175°C

IGES

Gate-to-Emitter Leakage Current

—

±100

VGE = ± 20 V

Switching Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max.h Units

Total Gate Charge (turn-on)

—

19.5

IC = 6.0A

Qge

Gate-to-Emitter Charge (turn-on)

—

3.1

4.65

VCC = 400V

Qgc

Gate-to-Collector Charge (turn-on)

—

6.4

9.6

VGE = 15V

Eon

Turn-On Switching Loss

—

IC = 6.0A, VCC = 400V, VGE = 15V

Eoff

Turn-Off Switching Loss

—

122

143

μJRG = 47, L=1mH, LS= 150nH, TJ = 25°C

Etotal

Total Switching Loss

—

178

229

Energy los s es include tail anddioderevers e recovery

td(on)

Turn-On delay time

—

IC = 6.0A, VCC = 400V

Rise time

—

RG = 47, L=1mH, LS= 150nH

td(off)

Turn-Off delay time

—

TJ = 25°C

Fall time

—

Eon

Turn-On Switching Loss

—

140

—

IC = 6.0A, VCC = 400V, VGE = 15V

Eoff

Turn-Off Switching Loss

—

189

—

μJ

RG = 47, L=1mH, LS= 150nH, TJ = 175°C

Etotal

Total Switching Loss

—

329

—

Energy los s es include tail anddioderevers e recovery

td(on)

Turn-On delay time

—

IC = 6.0A, VCC = 400V

Rise time

—

RG = 47, L=1mH, LS= 150nH

td(off)

Turn-Off delay time

—

TJ = 175°C

Fall time

—

Cies

Input Capacitance

—

350

—

VGE = 0V

Coes

Output Capacitance

—

VCC = 30V

Cres

Reverse Transfer Capacitance

—

f = 1Mhz

TJ = 175°C, IC = 24A

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

VCC = 500V, Vp =600V

RG = 100, VGE = +20V to 0V

VCC = 400V, Vp =600V

RG = 100, VGE = +15V to 0V

Erec

Reverse recovery energy of the diode

—

178

—

μJTJ = 175

trr

Diode Reverse recovery time

—

VCC = 400V, IF = 6.0A

Irr

Peak Reverse Recovery Current

—

VGE = 15V, Rg = 47, L=1mH, LS=150nH

Diode Forward Voltage Drop

Collector-to-Emitter Leakage Current

SCSOA

Short Circuit Safe Operating Area

—

μs

Conditions

—

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