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IXDD504PI 数据表(PDF) 3 Page - IXYS Corporation

部件名 IXDD504PI
功能描述  4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown
PDF  13 Pages
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制造商  IXYS [IXYS Corporation]
网页  http://www.ixys.com
标志 IXYS - IXYS Corporation

IXDD504PI 数据表(HTML) 3 Page - IXYS Corporation

  IXDD504PI Datasheet HTML 1Page - IXYS Corporation IXDD504PI Datasheet HTML 2Page - IXYS Corporation IXDD504PI Datasheet HTML 3Page - IXYS Corporation IXDD504PI Datasheet HTML 4Page - IXYS Corporation IXDD504PI Datasheet HTML 5Page - IXYS Corporation IXDD504PI Datasheet HTML 6Page - IXYS Corporation IXDD504PI Datasheet HTML 7Page - IXYS Corporation IXDD504PI Datasheet HTML 8Page - IXYS Corporation IXDD504PI Datasheet HTML 9Page - IXYS Corporation Next Button
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3
IXDD504 / IXDE504
Unless otherwise noted, 4.5V
≤ V
CC ≤ 30V .
All voltage measurements with respect to GND. IXD_504 configured as described in Test Conditions. All specifications are for one channel.
Electrical Characteristics @ T
A = 25
oC (3)
Absolute Maximum Ratings (1)
Operating Ratings (2)
Parameter
Value
Supply Voltage
35 V
All Other Pins (unless specified
-0.3 V to V
CC + 0.3V
otherwise)
Junction Temperature
150
°C
Storage Temperature
-65
°C to 150 °C
Lead Temperature (10 Sec)
300
°C
Parameter
Value
Operating Supply Voltage
4.5V to 30V
Operating Temperature Range
-55
°C to 125 °C
(4)
IXYS reserves the right to change limits, test conditions, and dimensions.
Package Thermal Resistance *
8-PinPDIP
(PI)
θ
J-A (typ) 125 °C/W
8-PinSOIC
(SIA)
θ
J-A(typ)
200
°C/W
8-LeadDFN
(D2)
θ
J-A(typ)
125-200
°C/W
8-LeadDFN
(D2)
θ
J-C(max) 2.1 °C/W
8-LeadDFN
(D2)
θ
J-S(typ)
6.4°C/W
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
VIH, VENH
High input & EN voltage
4.5V
≤ V
IN ≤ 18V
3
V
VIL, VENL
Low input & EN voltage
4.5V
≤ V
IN ≤ 18V
0.8
V
VIN
Input voltage range
-5
VCC + 0.3
V
VEN
Enable voltage range
- 0.3
VCC + 0.3
V
IIN
Input current
0V
≤ V
IN ≤ VCC
-10
10
µA
VOH
High output voltage
VCC - 0.025
V
VOL
Low output voltage
0.025
V
ROH
High state output resistance
VCC = 18V
IOUT = 10mA
1.5
2.5
Ω
ROL
Low state output resistance
VCC = 18V
IOUT = 10mA
1.2
2.0
Ω
IPEAK
Peak output current
VCC = 15V
4
A
IDC
Continuous output current
Limited by package
dissipation
1
A
tR
Rise time
CLOAD =1000pF
VCC =18V
9
16
ns
tF
Fall time
CLOAD =1000pF
VCC =18V
8
14
ns
tONDLY
On-time propagation delay
CLOAD =1000pF
VCC =18V
19
40
ns
tOFFDLY
Off-time propagation delay
CLOAD =1000pF
VCC =18V
18
35
ns
tENOH
Enable to output high delay time
15
30
ns
tDOLD
Disable to high impedance state
delay time
63
100
ns
VCC
Power supply voltage
4.5
18
30
V
REN
Enable Pull-up Resistor
200
k
Ω
ICC
Power supply current
VCC = 18V, VIN = 0V
VIN = 3.5V
VIN = VCC
1
20
3
20
µA
mA
mA



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