IXTH16P60P datasheet(4/5 Pages) IXYS

部件名	IXTH16P60P

功能描述	Preliminary Technical Information PolarPTM Power MOSFET P-Channel Enhancement Mode

PDF	5 Pages

Scroll/Zoom	100%

制造商	IXYS [IXYS Corporation]

网页	http://www.ixys.com

标志

4 / 5 page

IXTH16P60P

IXTT16P60P

IXYS reserves the right to change limits, test conditions, and dimensions.

Fig. 7. Input Admittance

-20

-18

-16

-14

-12

-10

-8

-6

-4

-2

-6.0

-5.5

-5.0

-4.5

-4.0

-3.5

VGS - Volts

TJ = 125ºC

25ºC

- 40ºC

Fig. 8. Transconductance

-20

-18

-16

-14

-12

-10

-8

-6

-4

-2

ID - Amperes

TJ = - 40ºC

125ºC

25ºC

Fig. 9. Forward Voltage Drop of

Intrinsic Diode

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

-3.5

-3.0

-2.5

-2.0

-1.5

-1.0

-0.5

VSD - Volts

TJ = 125ºC

TJ = 25ºC

Fig. 10. Gate Charge

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

1020

3040506070

8090

100

QG - NanoCoulombs

VDS = - 300V

I D = - 8A

I G = -1mA

Fig. 11. Capacitance

100

1,000

10,000

-40

-35

-30

-25

-20

-15

-10

-5

VDS - Volts

f = 1 MHz

Ciss

Crss

Coss

Fig. 12. Forward-Bias Safe Operating Area

0.1

1.0

10.0

100.0

100

1000

VDS - Volts

TJ = 150ºC

TC = 25ºC

Single Pulse

100µs

RDS(on) Limit

1ms

100ms

10ms

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