LR024N datasheet(2/13 Pages) IRF

2 / 13 page

AUIRLR/U024N

www.irf.com

Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)

VDD = 25V, starting TJ = 25°C, L = 790µH, RG = 25Ω, IAS = 11A. (See Figure 12)

ISD ≤ 11A, di/dt ≤ 290A/µs, VDD ≤ V(BR)DSS, TJ ≤ 175°C

Pulse width ≤ 300µs; duty cycle ≤ 2%

This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact .

Uses IRLZ24N data and test conditions.

Notes:

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min.

Typ.

Max. Units

V(BR)DSS

Drain-to-Source Breakdown Voltage

–––

∆V(BR)DSS/∆TJ

Breakdown Voltage Temp. Coefficient

–––

0.061

–––

V/°C

–––

0.065

–––

0.080

–––

0.110

VGS(th)

Gate Threshold Voltage

1.0

–––

2.0

gfs

Forward Transconductance

8.3

–––

IDSS

Drain-to-Source Leakage Current

–––

µA

–––

250

IGSS

Gate-to-Source Forward Leakage

–––

100

Gate-to-Source Reverse Leakage

–––

-100

Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Total Gate Charge

–––

Qgs

Gate-to-Source Charge

–––

3.7

Qgd

Gate-to-Drain ("Miller") Charge

–––

8.5

td(on)

Turn-On Delay Time

–––

7.1

–––

Rise Time

–––74–––

td(off)

Turn-Off Delay Time

–––

Fall Time

–––29–––

Internal Drain Inductance

Between lead,

6mm (0.25in.)

Internal Source Inductance

from package

and center of die contact

Ciss

Input Capacitance

–––

480

–––

Coss

Output Capacitance

–––

130

–––

Crss

Reverse Transfer Capacitance

–––

Diode Characteristics

Parameter

Min.

Typ.

Max. Units

Continuous Source Current

(Body Diode)

ISM

Pulsed Source Current

(Body Diode)

VSD

Diode Forward Voltage

–––

1.3

trr

Reverse Recovery Time

–––

Qrr

Reverse Recovery Charge

–––

130

200

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

RDS(on)

Static Drain-to-Source On-Resistance

Ω

VGS = 5.0V, ID = 10A

VGS = 4.0V, ID = 9.0A

–––

4.5

7.5

VGS = 5.0V,See Fig 6 and 13 fh

VDD = 28V

ID = 11A

RG = 12

Ω, VGS = 5.0V

TJ = 25°C, IS = 11A, VGS = 0V f

TJ = 25°C, IF = 11A

di/dt = 100A/µs

Conditions

VGS = 0V, ID = 250µA

Reference to 25°C, ID = 1mA

VGS = 10V, ID = 10A

VDS = VGS, ID = 250µA

VDS = 55V, VGS = 0V

VDS = 44V, VGS = 0V, TJ = 150°C

MOSFET symbol

showing the

integral reverse

p-n junction diode.

VDS = 25V, ID = 11A

ID = 11A

VDS = 44V

Conditions

RD = 2.4

Ω, See Fig.10

Ãfh

VGS = 0V

VDS = 25V

ƒ = 1.0MHz, See Fig.5

VGS = 16V

VGS = -16V

LR024N 数据表(PDF) 2 Page - International Rectifier

LR024N 数据表(HTML) 2 Page - International Rectifier

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13

数据表下载