| 数据搜索系统,热门电子元器件搜索 |
|
STL10DN15F3 数据表(PDF) 5 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
STL10DN15F3 数据表(HTML) 5 Page - STMicroelectronics |
|
5 / 14 page ![]() STL10DN15F3 Electrical characteristics Doc ID 023781 Rev 1 5/14 Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 2.8 A ISDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 11.2 A VSD (2) 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Forward on voltage ISD= 2.8 A, VGS=0 -1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD= 2.8 A, di/dt = 100 A/µs, VDD=120 V, Tj=150 °C - 73.5 210 5.7 ns nC A |
|
|
链接网址 |
| ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 数据表链接 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |