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STM32F101ZGT6 数据表(PDF) 61 Page - STMicroelectronics |
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STM32F101ZGT6 数据表(HTML) 61 Page - STMicroelectronics |
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61 / 108 page ![]() STM32F101xF, STM32F101xG Electrical characteristics Doc ID 17143 Rev 2 61/108 th(BL_NOE) FSMC_BL hold time after FSMC_NOE high 0 ns tv(BL_NE) FSMC_NEx low to FSMC_BL valid 0 ns tsu(Data_NE) Data to FSMC_NEx high setup time 2THCLK + 24 ns tsu(Data_NOE) Data to FSMC_NOE high setup time 2THCLK + 25 ns th(Data_NE) Data hold time after FSMC_NEx high 0 ns th(Data_NOE) Data hold time after FSMC_NOE high 0 ns 1. CL = 15 pF. 2. Preliminary values. Table 33. Asynchronous multiplexed NOR/PSRAM read timings(1)(2) (continued) Symbol Parameter Min Max Unit |
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