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STI12N65M5 数据表(PDF) 8 Page - STMicroelectronics |
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STI12N65M5 数据表(HTML) 8 Page - STMicroelectronics |
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8 / 23 page ![]() Electrical characteristics STD/F/I/P/U12N65M5 8/23 Doc ID 15428 Rev 5 Figure 14. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Figure 16. Source-drain diode forward characteristics Figure 17. Normalized BVDSS @ 1 mA vs temperature Figure 18. Switching losses vs gate resistance (1) 1. Eon including reverse recovery of a SiC diode VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) -25 1.10 75 25 50 100 AM05581v1 RDS(on) 1.7 1.5 0.9 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 0.7 1.1 1.3 1.9 2.1 125 ID= 4.25 A VGS= 10 V AM05501v2 VSD 0 20 ISD(A) (V) 10 50 30 40 0 0.2 0.4 0.6 0.8 1.0 1.2 TJ=-50°C TJ=150°C TJ=25°C AM05584v1 BVDSS -50 0 TJ(°C) (norm) -25 75 25 50 100 0.93 0.95 0.97 0.99 1.01 1.03 1.05 1.07 AM05583v1 E 10 0 0 20 RG( Ω) ( µJ) 10 30 20 30 40 ID=5A VDD=400V Eon Eoff 40 50 60 AM05585v1 |
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