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STF7N95K3 数据表(PDF) 3 Page - STMicroelectronics |
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STF7N95K3 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 15 page ![]() STF7N95K3, STP7N95K3, STW7N95K3 Electrical ratings 3/15 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit TO-220, TO-247 TO-220FP VGS Gate-source voltage ± 30 V ID Drain current (continuous) at TC = 25 °C 7.2 7.2 (1) 1. Limited by package A ID Drain current (continuous) at TC = 100 °C 4.5 4.5 (1) A IDM (2) 2. Pulse width limited by safe operating area Drain current (pulsed) 28.8 28.8 (1) A PTOT Total dissipation at TC = 25 °C 150 35 W IAR Max current during repetitive or single pulse avalanche (pulse width limited by TJMAX) 9A EAS Single pulse avalanche energy (3) 3. Starting Tj = 25 °C, ID = IAR, VDD = 50 V 220 mJ Derating factor 1.12 0.24 W/°C dv/dt (4) 4. ISD ≤ 7.2 A, di/dt = 100 A/µs, VPeak < V(BR)DSS Peak diode recovery voltage slope 6 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) 2000 V Tj Tstg Operating junction temperature Storage temperature -55 to 150 °C Table 3. Thermal data Symbol Parameter TO-220 TO-247 TO-220FP Unit Rthj-case Thermal resistance junction-case max 0.83 3.57 °C/W Rthj-amb Thermal resistance junction-ambient max 62.5 50 62.5 °C/W Tl Maximum lead temperature for soldering purpose 300 °C |
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