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IR2213STRPBF 数据表(PDF) 1 Page - International Rectifier

部件名 IR2213STRPBF
功能描述  HIGH AND LOW SIDE DRIVER
PDF  15 Pages
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制造商  IRF [International Rectifier]
网页  http://www.irf.com
标志 IRF - International Rectifier

IR2213STRPBF 数据表(HTML) 1 Page - International Rectifier

  IR2213STRPBF Datasheet HTML 1Page - International Rectifier IR2213STRPBF Datasheet HTML 2Page - International Rectifier IR2213STRPBF Datasheet HTML 3Page - International Rectifier IR2213STRPBF Datasheet HTML 4Page - International Rectifier IR2213STRPBF Datasheet HTML 5Page - International Rectifier IR2213STRPBF Datasheet HTML 6Page - International Rectifier IR2213STRPBF Datasheet HTML 7Page - International Rectifier IR2213STRPBF Datasheet HTML 8Page - International Rectifier IR2213STRPBF Datasheet HTML 9Page - International Rectifier Next Button
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Typical Connection
Features
Floating channel designed for bootstrap operation
Fully operational to +1200V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 12 to 20V
Undervoltage lockout for both channels
3.3V logic compatible
Separate logic supply range from 3.3V to 20V
Logic and power ground ±5V offset
CMOS Schmitt-triggered inputs with pull-down
Cycle by cycle edge-triggered shutdown logic
Matched propagation delay for both channels
Outputs in phase with inputs
Also available LEAD-FREE (PbF)
Description
The IR2213(S) is a high voltage, high speed power
MOSFET and IGBT driver with independent high and
low side referenced output channels. Proprietary
HVIC and latch immune CMOS technologies enable
ruggedized monolithic construction. Logic inputs are
compatible with standard CMOS or LSTTL outputs,
down to 3.3V logic. The output drivers feature a high
Packages
IR2213(S) & (PbF)
HIGH AND LOW SIDE DRIVER
Product Summary
VOFFSET
1200V max.
IO+/-
1.7A / 2A
VOUT
12 - 20V
ton/off (typ.)
280 & 225 ns
Delay Matching
30 ns
16-Lead SOIC
(wide body)
14-Lead PDIP
Preliminary Data Sheet No. PD60030 rev.P
pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched
to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power
MOSFET or IGBT in the high side configuration which operates up to 1200 volts.
HIN
up to 1200V
TO
LOAD
V
DD
V
B
V
S
HO
LO
COM
HIN
LIN
V
SS
SD
V
CC
LIN
V
DD
SD
V
SS
V
CC
www.irf.com
1
(Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical
connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout.


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