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IR2213STRPBF 数据表(PDF) 1 Page - International Rectifier |
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IR2213STRPBF 数据表(HTML) 1 Page - International Rectifier |
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1 / 15 page ![]() Typical Connection Features • Floating channel designed for bootstrap operation Fully operational to +1200V Tolerant to negative transient voltage dV/dt immune • Gate drive supply range from 12 to 20V • Undervoltage lockout for both channels • 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset • CMOS Schmitt-triggered inputs with pull-down • Cycle by cycle edge-triggered shutdown logic • Matched propagation delay for both channels • Outputs in phase with inputs • Also available LEAD-FREE (PbF) Description The IR2213(S) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs, down to 3.3V logic. The output drivers feature a high Packages IR2213(S) & (PbF) HIGH AND LOW SIDE DRIVER Product Summary VOFFSET 1200V max. IO+/- 1.7A / 2A VOUT 12 - 20V ton/off (typ.) 280 & 225 ns Delay Matching 30 ns 16-Lead SOIC (wide body) 14-Lead PDIP Preliminary Data Sheet No. PD60030 rev.P pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 1200 volts. HIN up to 1200V TO LOAD V DD V B V S HO LO COM HIN LIN V SS SD V CC LIN V DD SD V SS V CC www.irf.com 1 (Refer to Lead Assignments for correct pin configuration). This/These diagram(s) show electrical connections only. Please refer to our Application Notes and DesignTips for proper circuit board layout. |
类似零件编号 - IR2213STRPBF |
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类似说明 - IR2213STRPBF |
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