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MMA-174321-R4 数据表(PDF) 6 Page - IXYS Corporation |
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MMA-174321-R4 数据表(HTML) 6 Page - IXYS Corporation |
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6 / 11 page ![]() MMA-174321-R4 17-43GHz, 0.1W Gain Block Data Sheet October, 2012 MicroWave Technology, Inc. an IXYS Company, 4268 Solar Way, Fremont, CA 94538 510-651-6700 FAX 510-651-2208 WEB www.mwtinc.com MMA174321-R4 Rev 3.8 data sheet is subject to change without notice. All rights reserved © 2012 Please visit MwT website www.mwtinc.com for information on other MwT MMIC products. Page 6 of 11 Applications The MMA174321 MMIC power amplifier is designed for use as a power stage amplifier in microwave transmitters. It is ideally suited for 17 to 43GHz band applications requiring a flat gain response and excellent power performance. This amplifier is provided as a bare die format in a Gel-pack. Biasing and Operation The recommended bias conditions for best performance for the MMA174321 are VDD = 4.5V, Idsq = 250mA. Performance improvements are possible depending on applications. The drain bias voltage range is 3 to 5V and the quiescent drain current biasing range is 150mA to 300mA. Vg1 is connected to first stages of gate, and Vg2 is connected to following three stages of gates. Muting can be accomplished by setting Vg1 and Vg2 to the pinched-off voltage (Vp=-2V). The gate voltages (Vg1 and Vg2) should be applied prior to the drain voltages (Vd1 and Vd2) during power up and removed after the drain voltages during power down. The RF input port is connected internally to the 50Ω load for ESD protection purpose; therefore, an input decoupling capacitor is needed if the preceding output stage has DC present. The RF output is DC decoupled internally. Typical DC supply connection with bi-passing capacitors for the MMA174321 is shown in following pages. Frequency x2 and x3 Multiplier Applications: MMA174321 is able to use as a frequency x2 multiplier when biased under Vd1=5V, Vd2=5V, Vg1=-1.4V, Vg2=- 0.7V, Id1=1mA, and Id2=163mA. Optimum input RF power level is +9dBm. Typical measured data is shown in previous page. MMA174321 is also able to use as a frequency x3 multiplier when biased under Vd1=1V, Vd2=5V, Vg1=-0.75V, Vg2=-0.75V, Id1=21mA, and Id2=144mA. Optimum input RF power level is +9dBm. Typical measured data is shown in previous page. Assembly Techniques GaAs MMICs are ESD sensitive. ESD preventive measures must be employed in all aspects of storage, handling, and assembly. MMIC ESD precautions, handling considerations, die attach and bonding methods are critical factors in successful GaAs MMIC performance and reliability. |
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