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DMN4800LSSL 数据表(PDF) 2 Page - Diodes Incorporated

部件名 DMN4800LSSL
功能描述  N-CHANNEL ENHANCEMENT MODE MOSFET
PDF  6 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

DMN4800LSSL 数据表(HTML) 2 Page - Diodes Incorporated

  DMN4800LSSL Datasheet HTML 1Page - Diodes Incorporated DMN4800LSSL Datasheet HTML 2Page - Diodes Incorporated DMN4800LSSL Datasheet HTML 3Page - Diodes Incorporated DMN4800LSSL Datasheet HTML 4Page - Diodes Incorporated DMN4800LSSL Datasheet HTML 5Page - Diodes Incorporated DMN4800LSSL Datasheet HTML 6Page - Diodes Incorporated  
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DMN4800LSSL
Document number: DS35016 Rev. 3 - 2
2 of 6
www.diodes.com
October 2011
© Diodes Incorporated
DMN4800LSSL
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Units
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±20
V
Drain Current (Note 4) VGS = 10V
Steady
State
TA = 25°C
TA = 70°C
ID
8.0
6.4
A
Drain Current (Note 4)
VGS = 10V
Steady
State
TA = 25°C
TA = 70°C
ID
6.7
5.3
A
Pulsed Drain Current (Note 5)
IDM
50
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 4)
PD
1.46
W
Thermal Resistance, Junction to Ambient
RθJA
86
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 6)
Drain-Source Breakdown Voltage
BVDSS
30
⎯
⎯
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
1
μA
VDS = 30V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
VGS(th)
0.8
1.2
1.6
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS (ON)
⎯
11
14
14
20
m
Ω
VGS = 10V, ID = 8A
VGS = 4.5V, ID = 7A
Forward Transconductance
gfs
⎯
8
⎯
S
VDS = 10V, ID = 8A
Diode Forward Voltage (Note 6)
VSD
⎯
0.72
0.94
V
VGS = 0V, IS = 1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Ciss
⎯
798
⎯
pF
VDS = 10V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
⎯
128
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
122
⎯
pF
Gate Resistance
RG
⎯
1.37
⎯
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge
Qg
⎯
8.7
⎯
nC
VGS = 5V, VDS = 15V, ID = 9A
Gate-Source Charge
Qgs
⎯
1.7
⎯
Gate-Drain Charge
Qgd
⎯
2.4
⎯
Turn-On Delay Time
td(on)
⎯
5.03
⎯
ns
VDD = 15V, VGEN = 10V,
RL = 15Ω, RG = 6.0Ω, ID = 1A
Rise Time
tr
⎯
4.50
⎯
Turn-Off Delay Time
td(off)
⎯
26.33
⎯
Fall Time
tf
⎯
8.55
⎯
Notes:
4. Device mounted on FR-4 PCB, with minimum recommended pad layout.
5. Repetitive rating, pulse width limited by junction temperature.
6. Short duration pulse test used to minimize self-heating effect.



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