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MAT14 数据表(PDF) 3 Page - Analog Devices

部件名 MAT14
功能描述  Matched Monolithic Quad Transistor
PDF  12 Pages
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制造商  AD [Analog Devices]
网页  http://www.analog.com
标志 AD - Analog Devices

MAT14 数据表(HTML) 3 Page - Analog Devices

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MAT14
Rev. A | Page 3 of 12
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise specified.
Table 1.
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
DC AND AC CHARACTERISTICS
Current Gain
h
FE
10 µA ≤ I
C ≤ 1 mA
0 V ≤ V
CB ≤ 30 V
1
300
600
−40°C ≤ T
A ≤ +85°C
200
500
Current Gain Match
Δh
FE
I
C = 100 µA
2
1
4
%
0 V ≤ V
CB ≤ 30 V
Noise Voltage Density
e
N
I
C = 1 mA, VCB = 0
3
f
O = 10 Hz
2
4
nV/√Hz
f
O = 100 Hz
1.8
3
nV/√Hz
f
O = 1 kHz
1.8
3
nV/√Hz
Offset Voltage
V
OS
10 µA ≤ I
C ≤ 1 mA
4
0 V ≤ V
CB ≤ 30 V
100
400
µV
−40°C ≤ T
A ≤ +85°C
120
520
μV
Offset Voltage Change vs. V
CB Change
ΔV
OS/ΔVCB
0 V ≤ V
CB ≤ 30 V
4
10 µA ≤ I
C ≤ 1 mA
100
200
µV
Offset Voltage Change vs. I
C Change
ΔV
OS/ΔIC
10 µA ≤ I
C ≤ 1 mA
4, V
CB = 0 V
10
50
µV
Offset Voltage Drift
ΔV
OS/ΔT
−40°C ≤ T
A ≤ +85°C
I
C = 100 µA, VCB = 0 V
0.4
2
µV/°C
Breakdown Voltage
BV
CEO
I
C = 10 µA
40
V
−40°C ≤ T
A ≤ +85°C
40
V
Gain-Bandwidth Product
f
T
I
C = 1 mA, VCE = 10 V
300
MHz
Collector Leakage Current
Base
I
CBO
V
CB = 40 V
5
pA
−40°C ≤T
A ≤ +85°C
0.5
nA
Substrate
I
CS
V
CS = 40 V
0.5
nA
−40°C ≤ T
A ≤ +85°C
0.7
nA
Emitter
I
CES
V
CE = 40 V
3
nA
−40°C ≤ T
A ≤ +85°C
5
nA
Input Current
Bias
I
B
I
C = 100 µA, 0 V ≤ VCB ≤ 30 V
165
330
nA
−40°C ≤ T
A ≤ +85°C
200
500
nA
Offset
I
OS
I
C = 100 µA, VCB = 0 V
2
13
nA
−40°C ≤ T
A ≤ +85°C
8
40
nA
Offset Drift
ΔI
OS/ΔT
I
C = 100 µA
−40°C ≤ T
A ≤ +85°C
100
pA/°C
Collector Saturation Voltage
V
CE(SAT)
I
C = 1 mA, IB = 100 µA
0.03
0.06
V
Output Capacitance
C
OBO
V
CB = 15 V, IE
5 = 0, f = 1 MHz
10
pF
Bulk Resistance
r
BE
10 µA ≤ I
C ≤ 10 mA,VCB = 0 V
6
0.4
0.6
Ω
Input Capacitance
C
EBO
V
CB = 15 V, IE = 0, f = 1 MHz
40
pF
1 Current gain measured at I
C = 10 µA, 100 µA, and 1 mA.
2 Current gain match (Δh
FE) defined as: ΔhFE = (100(ΔIB)(hFE min)/IC).
3 Sample tested.
4 Measured at I
C = 10 µA and guaranteed by design over the specified range of IC.
5 See Table 2 for the emitter current rating.
6 Guaranteed by design.



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