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STV160NF02LT4 数据表(PDF) 2 Page - STMicroelectronics

部件名 STV160NF02LT4
功能描述  N-CHANNEL 20V - 0.0016Ω - 160A PowerSO-10 STripFET™II POWER MOSFET
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STV160NF02LT4 数据表(HTML) 2 Page - STMicroelectronics

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STV160NF02L
2/8
THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
0.71
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
50
°C/W
Tl
Maximum Lead Temperature For Soldering Purpose
300
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS =0
20
V
IDSS
Zero Gate Voltage
Drain Current (VGS =0)
VDS =Max Rating
1µA
VDS =Max Rating,TC = 125 °C
10
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =± 15 V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS =VGS,ID = 250µA
1V
RDS(on)
Static Drain-source On
Resistance
VGS =10 V,ID =80A
VGS =10 V,ID =45A
VGS =10 V,ID =20A
VGS =8V, ID =80 A
VGS =5V, ID =40 A
VGS =10V,ID=80 A;Tj =175 °C
VGS =8V, ID=80 A; Tj =175 °C
VGS =5V, ID=40 A; Tj =175 °C
1.35
1.6
1.56
1.7
3.5
2.5
2.5
2.5
3.5
6
5.7
7
11.4
m
Ω
m
Ω
m
Ω
m
Ω
m
Ω
m
Ω
m
Ω
m
Ω
ID(on)
On State Drain Current
VDS >ID(on) xRDS(on)max,
VGS =10V
160
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (1)
Forward Transconductance
VDS >ID(on) xRDS(on)max,
ID = 80A
210
S
Rg
Gate resistance
VDS =0 V,f= 1MHz,VGS =0
0.5
Ω
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =15V,f= 1MHz,VGS =0
4800
3000
680
pF
pF
pF
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS =0 V,f= 1MHz,VGS =0
7000
12300
4200
pF
pF
pF
LS
Internal Source Inductance
From the Lead End (6mm from
Package Body) to the Die
Center
4nH
LD
Internal Drain Inductance
Not Available on Surface Mounting
Package
Obsolete
Product(s)
- Obsolete
Product(s)



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