CY62156ESL datasheet(7/16 Pages) CYPRESS

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CY62156ESL MoBL®

Document Number: 001-54995 Rev. *D

Page 7 of 16

Switching Characteristics

Over the Operating Range

Parameter [13]

Description

45 ns

Unit

Min

Max

Read Cycle

tRC

Read Cycle Time

–

tAA

Address to Data Valid

–

tOHA

Data Hold from Address Change

–

tACE

CE1 LOW and CE2 HIGH to Data Valid

–

tDOE

OE LOW to Data Valid

–

tLZOE

OE LOW to Low Z[14]

–

tHZOE

OE HIGH to High Z[14, 15]

–

tLZCE

CE1 LOW and CE2 HIGH to Low Z[14]

–

tHZCE

CE1 HIGH and CE2 LOW to High Z[14, 15]

–

tPU

CE1 LOW and CE2 HIGH to Power Up

–

tPD

CE1 HIGH and CE2 LOW to Power Down

–

tDBE

BLE/BHE LOW to Data Valid

–

tLZBE

BLE/BHE LOW to Low Z[14]

–

tHZBE

BLE/BHE HIGH to High Z[14, 15]

–

Write Cycle[16]

tWC

Write Cycle Time

–

tSCE

CE1 LOW and CE2 HIGH to Write End

–

tAW

Address Setup to Write End

–

tHA

Address Hold from Write End

–

tSA

Address Setup to Write Start

–

tPWE

WE Pulse Width

–

tBW

BLE/BHE LOW to Write End

–

tSD

Data Setup to Write End

–

tHD

Data Hold from Write End

–

tHZWE

WE LOW to High Z[14, 15]

–

tLZWE

WE HIGH to Low Z[14]

–

Notes

13. Test conditions for all parameters other than tri-state parameters assume signal transition time of 3 ns or less, timing reference levels of VCC(typ)/2, input pulse levels

of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in the Figure 2 on page 5.

14. At any temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device.

15. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high-impedance state.

16. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE, BLE or both = VIL, and CE2 = VIH. All signals must be active to initiate a write

and any of these signals can terminate a write by going inactive. The data input setup and hold timing must be referenced to the edge of the signal that terminates

the write.

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