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LM5100ASD 数据表(PDF) 13 Page - Texas Instruments |
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LM5100ASD 数据表(HTML) 13 Page - Texas Instruments |
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13 / 28 page ![]() 1 10 100 1000 SWITCHING FREQUENCY (kHz) 0.001 0.010 0.100 CL = 4400 pF CL = 0 pF LM5100A, LM5100B, LM5100C, LM5101A, LM5101B, LM5101C www.ti.com SNOSAW2P – SEPTEMBER 2006 – REVISED MARCH 2013 The bootstrap diode power loss is the sum of the forward bias power loss that occurs while charging the bootstrap capacitor and the reverse bias power loss that occurs during reverse recovery. Since each of these events happens once per cycle, the diode power loss is proportional to frequency. Larger capacitive loads require more energy to recharge the bootstrap capacitor resulting in more losses. Higher input voltages (VIN) to the half bridge result in higher reverse recovery losses. The following plot was generated based on calculations and lab measurements of the diode recovery time and current under several operating conditions. This can be useful for approximating the diode power dissipation. The total IC power dissipation can be estimated from the previous plots by summing the gate drive losses with the bootstrap diode losses for the intended application. Figure 26. Diode Power Dissipation VIN = 50V Copyright © 2006–2013, Texas Instruments Incorporated Submit Documentation Feedback 13 Product Folder Links: LM5100A LM5100B LM5100C LM5101A LM5101B LM5101C |
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