LM5100A, LM5100B, LM5100C, LM5101A, LM5101B, LM5101C

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SNOSAW2P – SEPTEMBER 2006 – REVISED MARCH 2013

PIN DESCRIPTIONS(1) (continued)

Pin #

SO

MSOP-

Name

Description

Application Information

WSON-

WSON-

SOIC-8

Power

PowerPad

Pad-8

High-side

MOSFET

Connect to the bootstrap capacitor negative terminal

4

4

4

4

4

HS

source

and the source of the high-side MOSFET.

connection

The LM5100A/B/C inputs have CMOS type

High-side driver

thresholds. The LM5101A/B/C inputs have TTL type

5

5

5

7

5

HI

control input

thresholds. Unused inputs should be tied to ground

and not left open.

The LM5100A/B/C inputs have CMOS type

Low-side driver

thresholds. The LM5101A/B/C inputs have TTL type

6

6

6

8

6

LI

control input

thresholds. Unused inputs should be tied to ground

and not left open.

7

7

7

9

7

VSS

Ground return

All signals are referenced to this ground.

Low-side gate

Connect to the gate of the low-side MOSFET with a

8

8

8

10

8

LO

driver output

short, low inductance path.

EP (WSON and SO

Solder to the ground plane under the IC to aid in heat

EP

EP

EP

EP

PowerPad and MSOP-

dissipation.

PowerPad packages)

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Absolute Maximum Ratings

(1) (2)

VDD to VSS

−0.3V to +18V

HB to HS

−0.3V to +18V

LI or HI Input

LO Output

HO Output

−5V to +100V

HB to VSS

118V

Junction Temperature

+150°C

Storage Temperature Range

−55°C to +150°C

2 kV

(1)

Absolute Maximum Ratings indicate limits beyond which damage to the component may occur. Operating Ratings are conditions under

which operation of the device is specified. Operating Ratings do not imply performance limits. For performance limits and associated test

conditions, see the Electrical Characteristics Electrical Characteristics tables.

(2)

If Military/Aerospace specified devices are required, please contact the Texas Instruments Sales Office/ Distributors for availability and

specifications.

(3)

In the application the HS node is clamped by the body diode of the external lower N-MOSFET, therefore the HS node will generally not

exceed -1V. However, in some applications, board resistance and inductance may result in the HS node exceeding this stated voltage

transiently. If negative transients occur, the HS voltage must never be more negative than VDD-15V. For example if VDD = 10V, the

negative transients at HS must not exceed -5V.

(4)

The Human Body Model (HBM) is a 100 pF capacitor discharged through a 1.5k

Ω resistor into each pin. 2 kV for all pins except Pin 2,

Pin 3 and Pin 4 which are rated at 1000V for HBM. Machine Model (MM) ratings are : 100V(MM) for Options B and C; 50V(MM) for

Option A.

Recommended Operating Conditions

VDD

+9V to +14V

HS

−1V to 100V

HB

HS Slew Rate

< 50 V/ns

Junction Temperature

−40°C to +125°C

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