IR2153SPbF datasheet(2/9 Pages) IRF

2 / 9 page

IR2153(D)(S) & (PbF)

www.irf.com

NOTE:For new designs, we recommend

IR’s new product IRS2153D

Note 1:

This IC contains a zener clamp structure between the chip VCC and COM which has a nominal breakdown

voltage of 15.6V. Please note that this supply pin should not be driven by a DC, low impedance power source

greater than the VCLAMP specified in the Electrical Characteristics section.

Note 2:

Care should be taken to avoid output switching conditions where the VS node flies inductively below ground by

more than 5V.

Note 3:

Enough current should be supplied to the VCC pin of the IC to keep the internal 15.6V zener diode clamping the

voltage at this pin.

Recommended Operating Conditions

For proper operation the device should be used within the recommended conditions.

Symbol

Definition

Min.

Max.

Units

VBs

High side floating supply voltage

VCC - 0.7

VCLAMP

Steady state high side floating supply offset voltage

-3.0 (note 2)

600

VCC

Supply voltage

VCLAMP

ICC

Supply current

(note 3)

Junction temperature

-40

125

°C

Absolute Maximum Ratings

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-

eters are absolute voltages referenced to COM, all currents are defined positive into any lead. The thermal resistance and

power dissipation ratings are measured under board mounted and still air conditions.

Symbol

Definition

Min.

Max.

Units

High side floating supply voltage

-0.3

625

High side floating supply offset voltage

VB - 25

VB + 0.3

VHO

High side floating output voltage

VS - 0.3

VB + 0.3

VLO

Low side output voltage

-0.3

VCC + 0.3

VRT

RT pin voltage

-0.3

VCC + 0.3

VCT

CT pin voltage

-0.3

VCC + 0.3

ICC

Supply current (note 1)

—

IRT

RT pin current

-5

dVs/dt

Allowable offset voltage slew rate

-50

V/ns

Maximum power dissipation @ TA ≤ +25°C

(8 Lead DIP)

—

1.0

(8 Lead SOIC)

—

0.625

RthJA

Thermal resistance, junction to ambient

(8 Lead DIP)

—

125

(8 Lead SOIC)

—

200

Junction temperature

-55

150

Storage temperature

-55

150

°C

Lead temperature (soldering, 10 seconds)

—

300

°C/W

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