VNQ660SPTR-E datasheet(16/26 Pages) STMICROELECTRONICS

部件名	VNQ660SPTR-E

功能描述	Quad channel high side solid state relay

PDF	26 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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16 / 26 page

Application information

VNQ660SP

16/26

Application information

Figure 23.

Application schematic

Note:

Channels 3 & 4 have the same internal circuit as channel 1 & 2.

3.1

GND protection network against reverse battery

This section provides two solutions for implementing a ground protection network against

reverse battery.

3.1.1

Solution 1: a resistor in the ground line (RGND only)

This can be used with any type of load.

The following show how to dimension the RGND resistor:

RGND ≤600mV / 2 (IS(on)max)

RGND ≥ ( - VCC) / ( - IGND)

where - IGND is the DC reverse ground pin current and can be found in the absolute

maximum rating section of the device datasheet.

Power dissipation in RGND (when VCC < 0 during reverse battery situations) is:

PD = ( - VCC)

2/ R

GND

VCC

Dld

+5V

Rprot

STATUS

INPUT1

+5V

OUTPUT3

OUTPUT1

OUTPUT2

OUTPUT4

INPUT3

INPUT4

Rprot

INPUT2

µC

GND

DGND

RGND

VGND

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