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CSD17381F4 数据表(PDF) 2 Page - Texas Instruments

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部件名 CSD17381F4
功能描述  30-V, N-Channel NexFET??Power MOSFETs
PDF  11 Pages
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制造商  TI [Texas Instruments]
网页  http://www.ti.com
标志 TI - Texas Instruments

CSD17381F4 数据表(HTML) 2 Page - Texas Instruments

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CSD17381F4
SLPS411A – APRIL 2013 – REVISED JULY 2013
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, IDS = 250μA
30
V
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = 24V
1
μA
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = 10V
100
nA
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, IDS = 250μA
0.65
0.85
1.10
V
VGS = 1.8V, IDS =0.5A
160
250
m
Ω
VGS = 2.5V, IDS =0.5A
110
143
m
Ω
RDS(on)
Drain to Source On Resistance
VGS = 4.5V, IDS = 0.5A
90
117
m
Ω
VGS = 8V, IDS =0.5A
84
109
m
Ω
gfs
Transconductance
VDS = 15V, IDS = 0.5A
4.8
S
Dynamic Characteristics
Ciss
Input Capacitance
150
195
pF
VGS = 0V, VDS = 15V,
Coss
Output Capacitance
44
57
pF
f = 1MHz
Crss
Reverse Transfer Capacitance
2.2
2.9
pF
RG
Series Gate Resistance
23
Ω
Qg
Gate Charge Total (4.5V)
1040
1350
pC
Qgd
Gate Charge Gate to Drain
133
pC
VDS = 15V, IDS = 0.5A
Qgs
Gate Charge Gate to Source
226
pC
Qg(th)
Gate Charge at Vth
150
pC
Qoss
Output Charge
VDS = 15V, VGS = 0V
1110
pC
td(on)
Turn On Delay Time
3.4
ns
tr
Rise Time
1.4
ns
VDS = 0V, VGS = 4.5V,
IDS = 0.5A,RG = 2Ω
td(off)
Turn Off Delay Time
10.8
ns
tf
Fall Time
3.6
ns
Diode Characteristics
VSD
Diode Forward Voltage
ISD = 0.5A, VGS = 0V
0.73
0.9
V
Qrr
Reverse Recovery Charge
1500
pC
VDS= 15V, IF = 0.5A, di/dt = 300A/μs
trr
Reverse Recovery Time
5.6
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
Typical Values
UNIT
Thermal Resistance Junction to Ambient(1)
90
°C/W
RθJA
Thermal Resistance Junction to Ambient(2)
250
°C/W
(1)
Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
(2)
Device mounted on FR4 material with minimum Cu mounting area.
2
Submit Documentation Feedback
Copyright © 2013, Texas Instruments Incorporated
Product Folder Links: CSD17381F4



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