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ESDA6V1P6 数据表(PDF) 2 Page - STMicroelectronics |
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ESDA6V1P6 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics ESDAxxxP6 2/8 1 Characteristics Table 1. Absolute Maximum Ratings (Tamb = 25° C) Symbol Parameter Value Unit VPP IEC 61000-4-2 level 4 standard air discharge contact discharge ±15 ±8 kV PPP Peak pulse power (8/20 µs) (1) Tj initial = Tamb 1. for a surge greater than the maximum values, the diode will fail in short-circuit. ESDA6V1P6 / ESDA6V1-5P6 150 W ESDA14V2BP6 / ESDA25-4BP6 50 Tj Junction temperature 150 °C Tstg Storage temperature range -55 to +150 °C TL Maximum lead temperature for soldering during 10 s at 5 mm for case 260 °C Top Operating temperature range -40 to +150 °C Table 2. Electrical Characteristics (Tamb = 25° C) Symbol Parameter VRM Stand-off voltage VBR Breakdown voltage VCL Clamping voltage IRM Leakage current IPP Peak pulse current αT Voltage temperature coefficient VF Forward voltage drop C Capacitance Rd Dynamic resistance Part Numbers VBR @ IR IRM @ VRM Rd αTC min. max. max. max. typ. typ. @ 0V VV mA µA V Ω 10-4/°C pF ESDA6V1P6 6.1 7.2 1 0.5 3 1.5 4 70 ESDA6V1-5P6 ESDA14V2BP6 14.2 18 1 112 1.5 5.8 25 0.1 3 ESDA25-4BP6 25 30 1 1 24 1.7 7.3 22 V I VCLVBR VRM IF VF IRM IPP Slope: 1/Rd Unidirectional V I VCLVBR VRM IRM IPP Slope: 1/Rd Bidirectional |
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