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FERD30M45CT 数据表(PDF) 2 Page - STMicroelectronics |
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FERD30M45CT 数据表(HTML) 2 Page - STMicroelectronics |
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2 / 8 page ![]() Characteristics FERD30M45C 2/8 Doc ID 023771 Rev 1 1 Characteristics When diodes 1 and 2 are used simultaneously: Tj(diode 1) = P(diode 1) x Rth(j-c)(per diode) + P(diode 2) x Rth(c) Table 2. Absolute ratings (limiting values, per diode, at 25 °C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 45 V IF(RMS) Forward rms current 30 A IF(AV) Average forward current, = 0.5 Tc = 155 °C Per diode Per device 15 30 A Tc = 155 °C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 250 A Tstg Storage temperature range -65 to + 175 °C Tj Maximum operating junction temperature 175 °C Tj Maximum operating temperature (DC forward current without reverse bias, t = 1 hour)(1) 200 °C 1. condition to avoid thermal runaway for a diode on its own heatsink. dPtot dTj --------------- 1 Rth j a – -------------------------- Table 3. Thermal resistance Symbol Parameter Value (max) Unit Rth(j-c) Junction to case Per diode 1.6 °C/W Total 1.05 Rth(c) Coupling 0.5 |
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