2SC5053_REV2008 datasheet(1/3 Pages) ROHM

部件名	2SC5053_REV2008

功能描述	Low saturation voltage, typically VCE(sat)=0.12V at IC/IB=500mA/50mA

PDF	3 Pages

Scroll/Zoom	100%

制造商	ROHM [Rohm]

网页	http://www.rohm.com

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1 / 3 page

2SC5053

Transistors

Rev.D

1/2

Medium power transistor (50V, 1A)

2SC5053

Features

1) Low saturation voltage, typically VCE(sat)=0.12V at IC/

IB=500mA/50mA

2) PC=2W (on 40×40×0.7mm ceramic board)

3) Complements the 2SA1900

Dimensions (Unit : mm)

MPT3

(1)Base

(2)Collector

(3)Emitter

Absolute maximum ratings (Ta=25

°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter- base voltage

Collector power dissipation

Collector current

Collector power dissipation

Storage temperature

Symbol

Limits

60

50

5

1

0.5

2

150

−55 to +150

Unit

V

A

2

A (Pulse)

W

∗1

∗2

°C

∗1 Single pulse Pw=100ms

∗2 When mounted on a 40 40 0.7mm seramic board.

VCBO

VCEO

VEBO

IC

PC

tj

tstg

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

Cob

60

50

5

−

120

−

150

15

−

0.1

0.4

390

−

V

µA

V

−

MHz

pF

IC=50

µA

IC=1mA

IE=50

µA

VCB=40V

VEB=4V

IC/IB=500mA/50mA

VCE/IC=3V/0.5A

VCE=5V , IE=

−50mA , f=100MHz

VCB=10V , IE=0A , f=1MHz

BVCBO

BVCEO

BVEBO

ICBO

IEBO

hFE

fT

VCE(sat)

Packaging specifications and hFE

Type

Package

hFE

Code

Basic ordering unit (pleces)

2SC5053

MPT3

QR

T100

Marking

CG

1000

∗ Denotes hFE

∗

类似零件编号 - 2SC5053_REV2008

制造商	部件名	数据表	功能描述
Rohm	2SC5053T100Q	84Kb / 3P	Medium power transistor (50V, 1A)
Rohm	2SC5053T100R	84Kb / 3P	Medium power transistor (50V, 1A)

More results

类似说明 - 2SC5053_REV2008

制造商	部件名	数据表	功能描述
Fairchild Semiconductor	FGH30N60LSD	714Kb / 9P	Low saturation voltage: VCE(sat) =1.1V @ IC = 30A
Sanken electric	FGM623S	387Kb / 7P	Low Saturation Voltage VCE(sat)=1.5V typ. (IC=30A)
Fairchild Semiconductor	SGP23N60UFTU	416Kb / 7P	Low Saturation Voltage: VCE(sat) = 2.1 V @ IC = 12 A
Rohm	2SA1807_2SA1862	62Kb / 2P	High Breakdown Vlotage, Low saturation vlotage,typically Vce(sat) = -0.25V at lc/lc=-300mA/-6-mA.
MAKO SEMICONDUCTOR CO.,...	2SB1073	102Kb / 2P	Low collector-emitter saturation voltage VCE(sat)
	2SB1132	124Kb / 2P	Low VCE(sat) 0.2V(Typ) IC/IB=-500mA/-50mA
	2SB1424	132Kb / 2P	Low VCE(SAT) 0.2V(Typ.) (IC/IB=-2A/-0.1mA).
Inchange Semiconductor ...	2N5497	140Kb / 2P	Low Saturation Voltage-: VCE (sat)= 1V(Max)@IC= 3.5A
Inchange Semiconductor ...	2N5495	140Kb / 2P	Low Saturation Voltage-: VCE (sat)= 1V(Max)@IC= 3A
First Silicon Co., Ltd	FTC2655	162Kb / 2P	Low Saturation Voltage: VCE(sat)=0.5V(Max)(IC=1A)