STS11N3LLH5 datasheet(1/12 Pages) STMICROELECTRONICS

部件名	STS11N3LLH5

功能描述	N-channel 30 V, 0.0117 Ω, 11 A, SO-8 STripFET™ V Power MOSFET

PDF	12 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

1 / 12 page

June 2011

Doc ID 15982 Rev 2

1/12

12

STS11N3LLH5

N-channel 30 V, 0.0117

Ω, 11 A, SO-8

STripFET™ V Power MOSFET

Features

■ RDS(on) * Qg industry benchmark

■ Extremely low on-resistance RDS(on)

■ Very low switching gate charge

■ High avalanche ruggedness

■ Low gate drive power losses

Applications

■ Switching applications

Description

This device is an N-channel Power MOSFET

developed using STMicroelectronics'

STripFET™V technology. The device has been

optimized to achieve very low on-state resistance,

contributing to an FOM that is among the best in

its class..

Figure 1.

Internal schematic diagram

Type

VDSS

RDS(on)

max

ID

STS11N3LLH5

30 V

< 0.0132

Ω 11 A (1)

1.

The value is rated according Rthj-pcb

SO-8

1

4

5

8

Table 1.

Device summary

Order code

Marking

Package

Packaging

STS11N3LLH5

11D3L

SO-8

Tape and reel

www.st.com

类似零件编号 - STS11N3LLH5

制造商	部件名	数据表	功能描述
VBsemi Electronics Co.,...	STS11N3LLH5	929Kb / 9P	N-Channel 20V (D-S) MOSFET

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