IXTA26P20P IXTP26P20P

IXTP26P20P IXTQ26P20P

IXYS reserves the right to change limits, test conditions, and dimensions.

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

g

fs

V

10

17

S

C

iss

2920

pF

C

oss

V

540

pF

C

rss

100

pF

t

d(on)

18

ns

t

r

33

ns

t

d(off)

46

ns

t

f

21

ns

Q

g(on)

56

nC

Q

gs

V

18

nC

Q

gd

20

nC

R

thJC

0.5

°C/W

R

thCS

(TO-3P)(TO-247)

0.21

°C/W

(TO-220)

0.25

°C/W

Source-Drain Diode

Symbol

Test Conditions

Characteristic Values

(T

Min.

Typ.

Max.

I

S

V

- 26

A

I

SM

Repetitive

- 104

A

V

SD

I

- 3.0

V

t

rr

240

ns

Q

RM

2.20

μC

I

RM

-18.0

A

IXYS MOSFETs and IGBTs are covered

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065 B1

6,683,344

6,727,585

7,005,734 B2

7,157,338B2

by one or moreof the following U.S. patents: 4,850,072

5,017,508

5,063,307

5,381,025

6,259,123 B1

6,534,343

6,710,405 B2 6,759,692

7,063,975 B2

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463

6,771,478 B2 7,071,537

Note 1: Pulse test, t

≤ 300μs; duty cycle, d ≤ 2%.

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Resistive Switching Times

V

R

I

V