2STP535FP datasheet(3/8 Pages) STMICROELECTRONICS

部件名	2STP535FP

功能描述	NPN power Darlington transistor

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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2STP535FP

Electrical characteristics

Doc ID 16132 Rev 1

3/8

Electrical characteristics

(Tcase = 25 °C unless otherwise specified)

Table 4.

Electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ICEO

Collector cut-off

current (IB = 0)

VCE = 180 V

µA

ICBO

Collector-base cut-off

current (IE = 0)

VCB = 180 V

µA

IEBO

Emitter-base cut-off

current (IC = 0)

VEB = 5 V

100

µA

VCEO(sus)

(1)

Pulse test: pulse duration

≤300 µs, duty cycle ≤2 %.

Collector-emitter

sustaining voltage

(IB = 0)

IC = 30 mA

180

VCE(sat)

(1)

Collector-emitter

saturation voltage

IC = 3 A

IB = 6 mA

IC = 8 A

IB = 80 mA

2.5

VBE(on)

(1)

Base-emitter (on)

voltage

IC = 8 A

VCE = 4 V

2.8

hFE

(1)

DC current gain

IC = 3 A

VCE = 4 V

IC = 8 A

VCE = 4 V

1000

200

20000

(1)

Diode forward voltage

IF = 10 A

2.8

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