TSU101 datasheet(5/33 Pages) STMICROELECTRONICS

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TSU101, TSU102, TSU104

Electrical characteristics

Table 3. Electrical characteristics at Vcc+ = 1.8 V with Vcc- = 0 V, Vicm = Vcc/2, Tamb = 25 ° C, and

RL = 1 MΩ connected to Vcc/2 (unless otherwise specified)

Symbol

Parameter

Conditions

Min.

Typ.

Max.

Unit

DC performance

Vio

Input offset voltage

-3

0.1

-40 °C < T< 85 °C

-3.4

3.4

ΔVio/ΔT Input offset voltage drift

-40 °C < T< 85 °C

μV/°C

ΔVio

Long-term input offset

voltage drift

T = 25 °C(1)

0.18

Iio

Input offset current (2)

-40 °C < T< 85 °C

Iib

Input bias current (2)

-40 °C < T< 85 °C

CMR

Common mode rejection

ratio 20 log (

ΔVicm/ΔVio)

Vicm = 0 to 0.6 V, Vout = VCC/2

-40 °C < T< 85 °C

Vicm = 0 to 1.8 V, Vout = VCC/2

-40°C < T< 85 °C

Avd

Large signal voltage gain

Vout = 0.3 V to (VCC+ - 0.3 V)

RL = 100 kΩ

115

-40 °C < T< 85 °C

VOH

High level output voltage

(drop from VCC+)

RL = 100 kΩ

-40 °C < T< 85 °C

VOL

Low level output voltage

RL = 100 kΩ

-40 °C < T< 85 °C

Iout

Output sink current

Vout = VCC , VID = -200 mV

-40 °C < T< 85 °C

Output source current

Vout = 0 V, VID = + 200 mV

-40 °C < T< 85 °C

ICC

Supply current

(per channel)

No load, Vout = VCC/2

580

750

-40 °C < T< 85 °C

800

AC performance

GBP

Gain bandwidth product

RL = 1 MΩ, CL = 60 pF

kHz

Unity gain frequency

Φm

Phase margin

degrees

Gain margin

μV

month

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