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BAS321 数据表(PDF) 2 Page - NXP Semiconductors

部件名 BAS321
功能描述  BAS321 General purpose diode
PDF  9 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

BAS321 数据表(HTML) 2 Page - NXP Semiconductors

  BAS321 Datasheet HTML 1Page - NXP Semiconductors BAS321 Datasheet HTML 2Page - NXP Semiconductors BAS321 Datasheet HTML 3Page - NXP Semiconductors BAS321 Datasheet HTML 4Page - NXP Semiconductors BAS321 Datasheet HTML 5Page - NXP Semiconductors BAS321 Datasheet HTML 6Page - NXP Semiconductors BAS321 Datasheet HTML 7Page - NXP Semiconductors BAS321 Datasheet HTML 8Page - NXP Semiconductors BAS321 Datasheet HTML 9Page - NXP Semiconductors  
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2004 Jan 26
2
NXP Semiconductors
Product data sheet
General purpose diode
BAS321
FEATURES
• Small plastic SMD package
• Switching speed: max. 50 ns
• General application
• Continuous reverse voltage: max. 200 V
• Repetitive peak reverse voltage: max. 250 V
• Repetitive peak forward current: max. 625 mA.
APPLICATIONS
• General purpose switching in e.g. surface mounted
circuits.
DESCRIPTION
The BAS321 is a general purpose diode fabricated in
planar technology and encapsulated in a plastic SOD323
package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
Fig.1 Simplified outline (SOD323) and symbol.
Marking code: A7
The marking bar indicates the cathode.
handbook, halfpage
12
MAM406
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
Device mounted on an FR4 printed circuit-board.
TYPE
NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BAS321
−
plastic surface mounted package; 2 leads
SOD323
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VRRM
repetitive peak reverse voltage
−
250
V
VR
continuous reverse voltage
−
200
V
IF
continuous forward current
see Fig.2; note 1
−
250
mA
IFRM
repetitive peak forward current
tp < 0.5 ms; δ ≤ 0.25
−
625
mA
IFSM
non-repetitive peak forward current
square wave; Tj = 25 °C prior to
surge; see Fig.4
t = 1
µs
−
9
A
t = 100
µs
−
3
A
t = 10 ms
−
1.7
A
Ptot
total power dissipation
Tamb = 25 °C; note 1
−
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C



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