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BB201215 数据表(PDF) 2 Page - NXP Semiconductors

部件名 BB201215
功能描述  Low-voltage variable capacitance double diode
PDF  8 Pages
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制造商  NXP [NXP Semiconductors]
网页  http://www.nxp.com
标志 NXP - NXP Semiconductors

BB201215 数据表(HTML) 2 Page - NXP Semiconductors

  BB201215 Datasheet HTML 1Page - NXP Semiconductors BB201215 Datasheet HTML 2Page - NXP Semiconductors BB201215 Datasheet HTML 3Page - NXP Semiconductors BB201215 Datasheet HTML 4Page - NXP Semiconductors BB201215 Datasheet HTML 5Page - NXP Semiconductors BB201215 Datasheet HTML 6Page - NXP Semiconductors BB201215 Datasheet HTML 7Page - NXP Semiconductors BB201215 Datasheet HTML 8Page - NXP Semiconductors  
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2001 Oct 12
2
NXP Semiconductors
Product specification
Low-voltage variable capacitance
double diode
BB201
FEATURES
 Excellent linearity
 C1: 95 pF; C7.5: 27.6 pF
 C1 to C7.5 ratio: min. 3.1
 Very low series resistance
 Small plastic SMD package.
APPLICATIONS
 Electronic tuning in FM-radio
 Voltage Controlled Oscillators (VCO).
DESCRIPTION
The BB201 is a variable capacitance double diode with a
common cathode, fabricated in silicon planar technology
and encapsulated in the SOT23 small plastic SMD
package.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
BB201
SCp
PIN
DESCRIPTION
1
anode (a1)
2
anode (a2)
3
common cathode
handbook, halfpage
2
1
3
MAM169
2
1
3
Fig.1 Simplified outline (SOT23) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
Per diode
VR
continuous reverse voltage
15
V
IF
continuous forward current
20
mA
Tstg
storage temperature range
55
+125
C
Tj
operating junction temperature
55
+125
C



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