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BAT54C 数据表(PDF) 2 Page - Diodes Incorporated

部件名 BAT54C
功能描述  SOT23 SILICON EPITAXIAL SCHOTTKY BARRIER DIODES
PDF  2 Pages
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制造商  DIODES [Diodes Incorporated]
网页  http://www.diodes.com
标志 DIODES - Diodes Incorporated

BAT54C 数据表(HTML) 2 Page - Diodes Incorporated

  BAT54C Datasheet HTML 1Page - Diodes Incorporated BAT54C Datasheet HTML 2Page - Diodes Incorporated  
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SOT23 SILICON EPITAXIAL
SCHOTTKY BARRIER DIODES
ISSUE 1– SEPTEMBER 1995 7
FEATURES: Low V
F & High Current Capability
APPLICATIONS: PSU, Mobile Telecomms & SCSI
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Continuous Reverse Voltage
VR
30
V
Forward Current
IF
200
mA
Forward Voltage @ IF =10mA
VF
400
mV
Repetitive Peak Forward Current
IFRM
300
mA
Non Repetitive Forward Current t<1s
IFSM
600
mA
Power Dissipation at Tamb=25°C
Ptot
330
mW
Storage Temperature Range
Tstg
-55 to +150
°C
JunctionTemperature
¤
Tj
125
°C
ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Reverse Breakdown
Voltage
V(BR)R
30
50
V
IR=10µA
Forward Voltage
VF
135
200
280
350
530
240
320
400
500
1000
mV
mV
mV
mV
mV
IF=0.1mA
IF=1mA
IF=10mA
IF=30mA
IF=100mA
Reverse Current
IR
2.5
4
µ
A
VR=25V
Diode Capacitance
CD
7.5
10
pF
f=1MHz,VR=1V
Reverse Recover
Time
trr
5ns
switched from
IF=10mA to IR=10mA
RL=100Ω, Measured
at IR=1mA
¤ Dual Device; For simultaneous continuous use Tj=100°C.
3
2
1
3
2
1
2
3
1
3
1
BAT54 SERIES
1
3
2
BAT54
BAT54A
BAT54S
BAT54C
Device Type
SINGLE
COMMON
ANODE
SERIES
COMMON
CATHODE
Pin Configuration
L4Z
L42
L44
L43
Partmarking Detail
30
10
20
0
+125°C
+85°C
TA - Ambient Temperature ( °C)
PD v TA Characteristics
0
90
180
270
330
CT v VR Characteristics
0
5
10
15
0
50
100
150
Forward Voltage VF (V)
IF v VF Characteristics
0
0.6
0.3
+125°C
10µ
100µ
1m
10m
100m
1
0.9
+85°C
+25°C
0.15
0.45
0.75
10µ
100µ
10m
1m
Reverse Voltage VR (V)
IR v VR Characteristics
Reverse Voltage VR (V)
020
10
30
1µ
+25°C
TYPICAL CHARACTERISTICS
BAT54 SERIES
3 - 4
3 - 5



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